Anomalous Hall effect emerging from field-induced Weyl nodes in SmAlSi

Gao, Yuxiang; Lei, Shiming; Clements, Eleanor M.; Zhang, Yichen; Gao, Xue-Jian; Chi, Songxue; Law, Kam Tuen; Yi, Ming; Lynn, Jeffrey W.; Morosan, Emilia

doi:10.1103/PhysRevMaterials.9.L061201

Anomalous Hall effect emerging from field-induced Weyl nodes in SmAlSi

Journal Article · Wed Jun 04 00:00:00 EDT 2025 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.9.L061201· OSTI ID:3002929

^[1]; ^[2]; Clements, Eleanor M. ^[3]; Zhang, Yichen ^[1]; Gao, Xue-Jian ^[4]; ^[5]; Law, Kam Tuen ^[4]; Yi, Ming ^[1]; ^[6]; ^[1]

Rice University, Houston, TX (United States)
Rice University, Houston, TX (United States); Hong Kong University of Science and Technology (HKUST) (Hong Kong)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). Center for Neutron Research; Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Hong Kong University of Science and Technology (HKUST) (Hong Kong)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). Center for Neutron Research

The intrinsic anomalous Hall effect (AHE) has been reported in numerous ferromagnetic Weyl semimetals. However, the AHE in the antiferromagnetic (AFM) or paramagnetic (PM) state of Weyl semimetals has rarely been observed experimentally. Different mechanisms have been proposed to account for the emergence of the AHE from different types of magnetic order. Here, in this Letter, we propose a new model that explains the observed AHE in both the AFM and PM states of the noncentrosymmetric Weyl semimetal SmAlSi. The newly proposed mechanism is based on magnetic-field-induced Weyl node evolution, which qualitatively explains the temperature dependence of the anomalous Hall conductivity, which displays unconventional power-law behavior in both the AFM and PM states of SmAlSi.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: Research Grants Council (RGC) of Hong Kong; Robert A. Welch Foundation; US Air Force Office of Scientific Research (AFOSR); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 3002929

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 6 Vol. 9; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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