Folding of {bold {ital X}}-point phonons and conduction-band valleys in partially CuPt-ordered Ga{sub 0.52}In{sub 0.48}P grown on GaAs

Journal Article · Sun Nov 01 04:00:00 EST 1998 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.58.R13395· OSTI ID:300098

Kwok, S H; Yu, P Y ^[1]; Uchida, K ^[2]

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1. Department of Physics, University of California, Berkeley, California, 94720-7300 (United States)
2. Department of Communications and Systems, University of Electro-communications, Chofu, Tokyo (Japan)

We report the observation of a folded zone-edge phonon mode, in addition to the folded {ital L} point mode reported already in Raman scattering from Ga{sub x}In{sub 1{minus}x}P epitaxial layers grown on GaAs and containing two variants of CuPt ordering. This Raman mode becomes observable as a result of resonant enhancement at an electronic transition at 2.25 eV reported previously in electroreflectance measurements. Our results suggest that a folding of the Brillouin zone along the [001] direction occurs in partially ordered Ga{sub x}In{sub 1{minus}x}P samples due to the existence of antiphase boundaries. {copyright} {ital 1998} {ital The American Physical Society}

• OSTI ID: 300098
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 20 Vol. 58; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BAND THEORY
BRILLOUIN ZONES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LAYERS
PHONONS
RAMAN SPECTRA
VAPOR PHASE EPITAXY
VIBRATIONAL STATES