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Ferroelectric phase transition in group-IV monochalcogenides from an equivariant machine learned force field

Journal Article · · Physical Review Materials
DOI:https://doi.org/10.1103/t63g-4zp3· OSTI ID:2998493

Group-IV monochalcogenides are a class of layered ferroelectric semiconductors that have demonstrated spontaneous intrinsic polarization above room temperature. Here, in this study, we use the multi-atomic cluster expansion (MACE) machine learning architecture to train and test a force field capable of modeling the structural properties and second-order ferroelectric-to-paraelectric phase transition in a Group-IV monochalcogenide, GeSe. The model captures the double-well potential energy surface associated with the onset of macroscopic polarization in bulk GeSe within 12.5 meV/atom, as well as near-equilibrium properties like the phonon dispersion. The development of this quantitatively accurate force field enables long-time molecular dynamics simulations, which predict the critical temperature of the ferroelectric-to-paraelectric phase transition in bulk GeSe to be Tc = 600 K. This study demonstrates the capabilities of equivariant force-fields to accurately describe phenomena associated with structural symmetry breaking.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); USDOE Laboratory Directed Research and Development (LDRD) Program
Grant/Contract Number:
AC02-06CH11357; SC0023402; AC02-05CH11231
OSTI ID:
2998493
Alternate ID(s):
OSTI ID: 3011356
Journal Information:
Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 10 Vol. 9; ISSN 2475-9953
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

References (38)

Organic Nonvolatile Memory Devices Based on Ferroelectricity journal August 2009
Recent Progress in Two‐Dimensional Ferroelectric Materials journal November 2019
High-Temperature Crystal Structure and Chemical Bonding in Thermoelectric Germanium Selenide (GeSe) journal April 2017
Systematic assessment of various universal machine‐learning interatomic potentials journal July 2024
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal July 1996
Sliding ferroelectricity in two-dimensional materials and device applications journal April 2025
Accelerating high-throughput phonon calculations via machine learning universal potentials journal April 2025
Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers journal February 2016
Intrinsic Ferroelasticity and/or Multiferroicity in Two-Dimensional Phosphorene and Phosphorene Analogues journal April 2016
Ferroelectricity, Antiferroelectricity, and Ultrathin 2D Electron/Hole Gas in Multifunctional Monolayer MXene journal April 2017
Interfacial phase-change memory journal July 2011
Towards universal neural network potential for material discovery applicable to arbitrary combination of 45 elements journal May 2022
Sliding induced multiple polarization states in two-dimensional ferroelectrics journal December 2022
A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu journal April 2010
Robust bi-stable memory operation in single-layer graphene ferroelectric memory journal July 2011
Molecular dynamics with coupling to an external bath journal October 1984
Sliding ferroelectricity in 2D van der Waals materials: Related physics and future opportunities journal December 2021
Norm-conserving and ultrasoft pseudopotentials for first-row and transition elements journal October 1994
The atomic simulation environment—a Python library for working with atoms journal June 2017
Benchmarking structural evolution methods for training of machine learned interatomic potentials journal July 2022
Implementation strategies in phonopy and phono3py journal June 2023
Theory of finite-temperature two-dimensional structural transformations in group-IV monochalcogenide monolayers journal May 2020
Ab initiomolecular dynamics for liquid metals journal January 1993
Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium journal May 1994
Projector augmented-wave method journal December 1994
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Polarization and valley switching in monolayer group-IV monochalcogenides journal July 2016
Tuning the ferroelectric-to-paraelectric transition temperature and dipole orientation of group-IV monochalcogenide monolayers journal January 2018
Graphene Field-Effect Transistors with Ferroelectric Gating journal October 2010
Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides journal August 2016
Structural Phase Transition and Material Properties of Few-Layer Monochalcogenides journal December 2016
Generalized Gradient Approximation Made Simple journal October 1996
Phase Diagram of BaTi O 3 journal March 1997
Colloquium : Physical properties of group-IV monochalcogenide monolayers journal March 2021
Ferroelectric Memories journal December 1989
Discovery of robust in-plane ferroelectricity in atomic-thick SnTe journal July 2016
First-principles Phonon Calculations with Phonopy and Phono3py journal January 2023

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