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Large Non‐Resonant Infrared Optical Second Harmonic Generation in Bulk Crystals of Van der Waals Semiconductor, SnP2Se6

Journal Article · · Advanced Optical Materials
2D van der Waals (vdW) materials have emerged as a highly promising candidates for nonlinear optical (NLO) applications. This study presents the synthesis, comprehensive linear optical, and optical second harmonic generation (SHG) characterization of a novel 2D vdW semiconductor SnP2Se6 in its bulk single crystal form. It exhibits an indirect bandgap of ≈1.47 eV and an exceptional non-resonant SHG coefficient of d33 ∼ −222 ± 30 pm V−1 at a fundamental wavelength of 2 µm, which is ≈7 times larger than that of the commercial AgGaSe2 with a comparable bandgap. Density functional theory (DFT) calculations of the linear and nonlinear optical properties exhibit reasonable agreement with the experimental measurements, revealing the chemical origin of the enhanced properties. Moreover, SnP2Se6 can exhibit both type-I and type-II phase matching over a wide spectral range, fulfilling one of the key criteria for an ideal NLO crystal. These exceptional properties position SnP2Se6 as a highly promising candidate for NLO applications.
Research Organization:
Pennsylvania State University, University Park, PA (United States)
Sponsoring Organization:
Air Force Office of Scientific Research (AFOSR); National Energy Research Scientific Computing Center (NERSC); National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
Grant/Contract Number:
AC02-05CH11231; SC0021118
OSTI ID:
2997501
Journal Information:
Advanced Optical Materials, Journal Name: Advanced Optical Materials Journal Issue: 9 Vol. 13; ISSN 2195-1071
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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