Rapid thermal annealing of low-temperature GaAs layers

Journal Article · Mon Apr 17 00:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.113911· OSTI ID:29248

Liliental-Weber, Z; Lin, X W; Washburn, J ^[1]; Schaff, W ^[2]

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1. Materials Science Division, Lawrence Berkeley Laboratory, 62/203, Berkeley, California 94720 (United States)
2. School of Electrical Engineering, Cornell University, Ithaca, New York 14853-5401 (United States)

Electron microscopy studies of annealed GaAs layers grown by molecular beam epitaxy at low temperature (200 {degree}C) were used to monitor growth of As precipitates. Ostwald ripening kinetics was used to deduce a migration enthalpy of 1.4{plus_minus}0.3 eV for the diffusion mediating defect. A conclusive picture of the dominant diffusion mechanism can be given, attributing this value to the migration enthalpy of gallium vacancies ({ital V}{sub Ga}), which is well established by other experiments. The present studies indicate that growth of As precipitates is driven by supersaturation of {ital V}{sub Ga}.

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 29248
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 66; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL DEFECTS
DIFFUSION
ENTHALPY
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PRECIPITATION
VACANCIES