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Defect and transport properties of nanocrystalline CeO{sub 2{minus}{ital x}}

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.117366· OSTI ID:288970
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  1. Massachusetts Institute of Technology, Cambridge , Massachusetts 02139 (United States)

It is shown that unique defect thermodynamics and transport properties result for oxides of a few nanometers crystallite size. Fully-dense CeO{sub 2{minus}{ital x}} polycrystals of {approximately}10 nm grain size were synthesized, and their electrical properties compared with those of samples coarsened from the same material. The nanocrystals showed reduced grain boundary resistance, 10{sup 4} higher electronic conductivity, and less than one-half the heat of reduction of its coarse-grained counterpart. These properties are attributed to a dominant role of interfacial defect formation. {copyright} {ital 1996 American Institute of Physics.}

DOE Contract Number:
FG02-87ER45307
OSTI ID:
288970
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 69; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English