Conduction mechanism of SrTiO{sub 3} thin films by RF-sputtering

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:28837

Kuroiwa, T; Mikami, N; Horikawa, T; Makita, T; Sato, K ^[1]; Honda, T; Watarai, H ^[2]

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1. Mitsubishi Electric Corp. Semiconductor Research Lab., Hyougo (Japan)
2. Mitsubishi Electric Corp. Materials & Electronic Devices Lab., Kanagawa (Japan)

Conduction mechanism of SrTiO{sub 3} thin films have been demonstrated. The SrTiO{sub 3} films were prepared on Pt/SiO{sub 2}/Si-wafer by means of a conventional RF-magnetron sputtering technique. Electrical properties of SrTiO{sub 3} films were measured with Pt/SrTiO{sub 3}/Pt structure. Leakage current characteristics were examined on as-deposited and annealed films. Leakage current conduction mechanism in a low electric field was different from that in a high electric field. In the low electric field, it was suggested that leakage current was caused by electrical traps at and/or near the interface between a top electrode and the SrTiO{sub 3} film. In the high electric field, leakage current conduction mechanism was interpreted in terms of Pool-Frenkel conduction due to oxygen vacancies.

• OSTI ID: 28837
• Report Number(s): CONF-931142--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
LEAKAGE CURRENT
SPUTTERING
STRONTIUM OXIDES
SURFACE COATING
TITANIUM OXIDES