Deposition and dielectric property of ion-beam assisted bismuth titanate film
Conference
·
OSTI ID:28823
- Syracuse Univ., NY (United States)
Thin films of bismuth titanate (Bi{sub 4}Ti{sub 3}O{sub 12}) have been prepared on different substrates by ion-beam sputtering technique. These films were deposited using a Bi(bismuth)-rich Bi{sub 4}Ti{sub 3}O{sub 12} ceramic target. Films were deposited with substrate temperatures ranging from 320{degrees}C to 550{degrees}C. We observed that the dielectric behavior of the deposited films strongly depends on the deposition parameters (such as the substrate temperature, sputter gas mixture, etc.). Results, also, indicate that films deposited at substrate temperature of about 450{degrees}C have dielectric property comparable to that of single crystal bismuth titanate.
- OSTI ID:
- 28823
- Report Number(s):
- CONF-931142--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ferroelectric thin film bismuth titanate prepared from acetate precursors
Microstructure and dielectric properties of pyrochlore Bi{sub 2}Ti{sub 2}O{sub 7} thin films
Lattice Structure and Dynamics of Two-Layer Heterostructures of Barium–Strontium Titanate and Layered Bismuth Titanate of Various Thicknesses on a Magnesium Oxide Substrate
Conference
·
Sat Oct 01 00:00:00 EDT 1994
·
OSTI ID:10185287
Microstructure and dielectric properties of pyrochlore Bi{sub 2}Ti{sub 2}O{sub 7} thin films
Journal Article
·
Wed Aug 15 00:00:00 EDT 2007
· Journal of Applied Physics
·
OSTI ID:21057506
Lattice Structure and Dynamics of Two-Layer Heterostructures of Barium–Strontium Titanate and Layered Bismuth Titanate of Various Thicknesses on a Magnesium Oxide Substrate
Journal Article
·
Thu Nov 14 23:00:00 EST 2019
· Physics of the Solid State
·
OSTI ID:22925023