skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Deep-etch silicon millimeter waveguide structure for electron acceleration

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
DOI:https://doi.org/10.1116/1.588763· OSTI ID:286575
;  [1]
  1. Department of Electrical Engineering and Computer Science, The University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

An ultrahigh vacuum compatible planar corrugated millimeter mm-waveguide structure (410-{mu}m-deep) possessing bi-fold symmetry and a precision beam aperture (800 {mu}m) has been fabricated using silicon processing technology, modeled with numerical analysis software, geometrically characterized, and compared to a similar waveguide fabricated using deep x-ray lithography (DXL) techniques. The waveguide was fabricated to operate at 60 GHz ({lambda}=5 mm) with fields suitable for 2{pi}/3 phase advance operation. Multichip alignment technology was used to provide a semiclosed conducting surface with aperture-coupled periodic resonator cavities. A pair of Si/Pyrex composite metallized substrates patterned with corrugated geometries have been vertically stacked with 980-{mu}m-diam Pyrex capillaries. Geometrical analysis of the muffin-tin waveguide was divided into two classifications: substrate feature error and die-to-die orientation error. Both types of error were characterized with the following results: feature accuracy was maintained to 0.1{percent}{endash}1.0{percent} tolerances in all directions (5 {mu}m or less in most cases) and die-to-die aperture distance agreed to within {approximately}3{percent} of theoretical calculation. Methods of improving these geometrical tolerances are suggested and critical issues are addressed. Electromagnetic testing of the mm waveguide has been investigated and a bead was fabricated for use in a bead-pull perturbation measurement of acceleration properties. The concluding section compares deep-etch silicon and DXL approaches for the fabrication of the {open_quote}{open_quote}micro-linac.{close_quote}{close_quote} It is concluded that through further refinement of thermal and conductive properties that the silicon waveguide is a viable method of constructing a micro-linac mm waveguide, requiring less fabrication complexity, processing time, and capital equipment investment than DXL. {copyright} {ital 1996 American Vacuum Society}

OSTI ID:
286575
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 14, Issue 4; Other Information: PBD: Jul 1996
Country of Publication:
United States
Language:
English

Similar Records

Bragg{endash}Fresnel optics for hard x-ray microscopy: Development of fabrication process and x-ray characterization at the Advanced Photon Source
Journal Article · Sat Aug 01 00:00:00 EDT 1998 · Review of Scientific Instruments · OSTI ID:286575

Micromachined microphones with diffraction-based optical displacement detection.
Journal Article · Fri Jul 01 00:00:00 EDT 2005 · Proposed for publication in the Journal of the Acoustical Society of America. · OSTI ID:286575

LASER MICROFABRICATION OF THZ WAKEFIELD STRUCTURES
Technical Report · Sat Nov 30 00:00:00 EST 2019 · OSTI ID:286575