Unconventional electronic structure evolution with hole doping in {ital B}{ital i}{sub {bold 2}}{ital S}{ital r}{sub {bold 2}}{ital C}{ital a}{ital C}{ital u}{sub {bold 2}}{ital O}{sub {bold 8+{delta}}}: Angle-resolved photoemission results
- Solid State Laboratory, McCullough 251, Stanford University, Stanford, California 94305 (United States)
We report angle-resolved photoemission results on Bi{sub 2}Sr{sub 2}Ca{sub 1{minus}{ital x}}Dy{sub {ital x}}Cu{sub 2}O{sub 8+{delta}} and oxygen depleted Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} investigating the electronic structure changes above {ital T}{sub {ital c}} in materials with hole doping levels ranging from insulating to slightly overdoped. Near optimal hole doping, the Fermi surface is large and consistent with band calculations. In underdoped samples with {ital T}{sub {ital c}} of 60{endash}70 K, portions of this Fermi surface are not seen. This change is related to the opening of an energy gap near ({pi},0) above {ital T}{sub {ital c}}. {copyright} {ital 1996 The American Physical Society.}
- OSTI ID:
- 286012
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 25 Vol. 76; ISSN 0031-9007; ISSN PRLTAO
- Country of Publication:
- United States
- Language:
- English
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