Unconventional electronic structure evolution with hole doping in {ital B}{ital i}{sub {bold 2}}{ital S}{ital r}{sub {bold 2}}{ital C}{ital a}{ital C}{ital u}{sub {bold 2}}{ital O}{sub {bold 8+{delta}}}: Angle-resolved photoemission results

Journal Article · Sat Jun 01 00:00:00 EDT 1996 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.76.4841· OSTI ID:286012

Marshall, D S; Dessau, D S; Loeser, A G; Park, C; Matsuura, A Y; Eckstein, J N; Bozovic, I; Fournier, P; Kapitulnik, A; Spicer, W E; Shen, Z ^[1]

---

1. Solid State Laboratory, McCullough 251, Stanford University, Stanford, California 94305 (United States)

We report angle-resolved photoemission results on Bi{sub 2}Sr{sub 2}Ca{sub 1{minus}{ital x}}Dy{sub {ital x}}Cu{sub 2}O{sub 8+{delta}} and oxygen depleted Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} investigating the electronic structure changes above {ital T}{sub {ital c}} in materials with hole doping levels ranging from insulating to slightly overdoped. Near optimal hole doping, the Fermi surface is large and consistent with band calculations. In underdoped samples with {ital T}{sub {ital c}} of 60{endash}70 K, portions of this Fermi surface are not seen. This change is related to the opening of an energy gap near ({pi},0) above {ital T}{sub {ital c}}. {copyright} {ital 1996 The American Physical Society.}

• OSTI ID: 286012
• Journal Information: Physical Review Letters, Vol. 76, Issue 25; Other Information: PBD: Jun 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH OXIDES
ELECTRONIC STRUCTURE
STRONTIUM OXIDES
CALCIUM OXIDES
COPPER OXIDES
PHOTOEMISSION
HIGH-TC SUPERCONDUCTORS
FERMI LEVEL
DOPED MATERIALS