Role of nitrogen in the downstream etching of silicon nitride

Journal Article · Mon Jul 01 04:00:00 EDT 1996 · Journal of Vacuum Science and Technology, A

DOI:https://doi.org/10.1116/1.580039· OSTI ID:285898

Blain, M G; Meisenheimer, T L; Stevens, J E ^[1]

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1. Microelectronics Development Laboratory, Sandia National Laboratories, Albuquerque, New Mexico 87185-1077 (United States)

Chemical downstream etching of silicon nitride (Si{sub 3}N{sub 4}) requires the addition of nitrogen to the discharge for obtaining efficient etch rates. A 10{percent} addition of N{sub 2} to a CF{sub 4}/O{sub 2} discharge (CF{sub 4}/O{sub 2} = 1.2, 0.525 Torr) causes a factor of 6 increase in the Si{sub 3}N{sub 4} etch rate and a 8{percent} decrease in the silicon dioxide etch rate. The result is selectivities approaching 9:1. Importantly, the conversion of CF{sub 4} to F and F-containing reactive species by the discharge decreases or remains constant as nitrogen is added to the discharge mix, indicating that the etching reaction is not limited by delivery of these species to the substrate. By measuring the amount of NO and NO{sub 2} in the etch chamber, it is found that the NO concentration increases by a factor of 6 as N{sub 2} is added, while the amount of NO{sub 2} remains small and constant. The NO signal is significantly reduced during nitride etching compared to the signal observed during a discharge with an empty etch chamber, implying that the increase in Si{sub 3}N{sub 4} etch rate is related to the formation of NO in the discharge. This view is consistent with the observation that an NF{sub 3} plasma in a quartz discharge tube results in a nitride etch rate which is a factor of 2 higher than for the same discharge in a sapphire tube. The conclusion is that the oxygen liberated by erosion of the quartz tube allows the formation of NO. That NO is a key Si{sub 3}N{sub 4} etch reactant was confirmed by performing a series of experiments in which N{sub 2}, NO, NO{sub 2}, and N{sub 2}O were injected into the discharge and then downstream in the reaction chamber during a CF{sub 4}/O{sub 2} discharge. Nitride etch rates increased significantly upon injection of NO into both discharge and etch chamber as compared to injection of the other N{sub {ital x}}O{sub {ital y}} species. {copyright} {ital 1996 American Vacuum Society}

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 285898
• Journal Information: Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 4 Vol. 14; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON TETRAFLUORIDE
CHEMICAL REACTION KINETICS
EMISSION SPECTRA
ETCHING
HIGH-FREQUENCY DISCHARGES
MASS SPECTRA
NITROGEN
OXYGEN
SILICON NITRIDES
SILICON OXIDES