Cation sublattice stacking faults in Cu-rich chalcopyrite CuInSe{sub 2}

Journal Article · Sat Jun 01 00:00:00 EDT 1996 · Journal of Materials Research

DOI:https://doi.org/10.1557/JMR.1996.0175· OSTI ID:285862

Hellman, O; Tanaka, S ^[1]; Niki, S; Fons, P ^[2]

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1. Tanaka Solid Junction Project/ERATO, Research Development Corporation of Japan, 1-1-1 Fukuura, Kanazawa-ku Yokohama 236 (Japan)
2. Optoelectronics Division, Electrotechnical Laboratory, 1-1-4 Umezono Tsukuba, Ibaraki 305 (Japan)

Using transmission electron microscopy, we have found stacking faults on the cation sublattice in the chalcopyrite structure of CuInSe{sub 2}. These films are grown by molecular beam epitaxy under Cu-rich conditions. These stacking faults are found to extend large distances in the plane of the film, and are not found to be present in samples not grown in Cu-rich conditions. We suggest that this defect is triggered by a Cu-induced transformation of the surface structure of the growing film. {copyright} {ital 1996 Materials Research Society.}

• OSTI ID: 285862
• Journal Information: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 6 Vol. 11; ISSN JMREEE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COPPER SELENIDES
INDIUM SELENIDES
MOLECULAR BEAM EPITAXY
SOLAR CELLS
STACKING FAULTS
SUBLATTICES
THIN FILMS