Epitaxial Si(001) grown at 80{endash}750{degree}C by ion-beam sputter deposition: Crystal growth, doping, and electronic properties
- Materials Science Department, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801 (United States)
Epitaxial undoped and Sb-doped Si films have been grown on Si(001) substrates at temperatures {ital T}{sub {ital s}} between 80 and 750{degree}C by ultrahigh-vacuum Kr{sup +}-ion-beam sputter deposition (IBSD). Critical epitaxial thicknesses {ital t}{sub {ital e}} in undoped films were found to range from 8 nm at {ital T}{sub {ital s}}=80{degree}C to {approx_gt}1.2 {mu}m at {ital T}{sub {ital s}}{ge}300{degree}C, while Sb incorporation probabilities {sigma}{sub Sb} varied from unity at {ital T}{sub {ital s}}{approx_lt}550{degree}C to {approx_equal}0.1 at 750{degree}C. These {ital t}{sub {ital e}} and {sigma}{sub Sb} values are approximately one and one to three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Temperature-dependent transport measurements carried out on 1-{mu}m-thick Sb-doped IBSD layers grown at {ital T}{sub {ital s}}{ge}350{degree}C showed that Sb was incorporated into substitutional sites with complete electrical activity and that electron mobilities in films grown at {ital T}{sub {ital s}}{ge}400{degree}C were equal to the best reported results for bulk Si. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- University of Illinois
- DOE Contract Number:
- AC02-76ER01198
- OSTI ID:
- 285542
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 80; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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