Calculation of near-threshold O{sup {minus}} photodetachment, including fine-structure effects

Journal Article · Wed May 01 04:00:00 EDT 1996 · Physical Review A

DOI:https://doi.org/10.1103/PhysRevA.53.3247· OSTI ID:285431

Miecznik, G; Greene, C H ^[1]

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1. Department of Physics and JILA, University of Colorado, Boulder, Colorado 80309-0440 (United States)

The photodetachment cross section of the O{sup {minus}}(2{ital p}{sup 5}{sup 2}{ital P}{sup {ital o}}) ground state is studied near the O(2{ital p}{sup 4}{sup 3}{ital P}{sub {ital j}{sub {ital c}}}) fine-structure thresholds, using the eigenchannel {ital R}-matrix method, multichannel quantum-defect theory, and the recoupling frame transformation. We find that the cross section increases monotonically with energy near the lowest detachmnet thresholds, in contrast to the Se{sup {minus}} photodetachment cross section studied earlier. Our calculations, which are based on {ital ab} {ital initio} methods to obtain multichannel scattering parameters, explain the near-threshold features in the O{sup {minus}} photodetachment cross section observed in an earlier experiment. {copyright} {ital 1996 The American Physical Society.}

• DOE Contract Number: FG02-90ER14145
• OSTI ID: 285431
• Journal Information: Physical Review A, Journal Name: Physical Review A Journal Issue: 5 Vol. 53; ISSN 1050-2947; ISSN PLRAAN
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
AB INITIO CALCULATIONS
EIGENSTATES
ELECTRON DETACHMENT
FINE STRUCTURE
GROUND STATES
OXYGEN
OXYGEN IONS
PHOTON-ION COLLISIONS
SELENIUM IONS