Superconductivity in amorphous Ta/Ge multilayers

Journal Article · Sat Jun 01 04:00:00 EDT 1996 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.53.15226· OSTI ID:284705

Trodahl, H J; Johnson, H L; Kaiser, A B; Subramaniam, C K; Ruck, B J ^[1]; Lynam, P ^[2]

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1. Department of Physics, Victoria University of Wellington, PO Box 600, Wellington (New Zealand)
2. Department of Physics, University College, The University of New South Wales, Australian Defence Force Academy, Canberra, ACT 2600 (Australia)

This paper reports measurements of the superconducting transition temperature ({ital T}{sub {ital c}}) of Ta/Ge multilayers for a range of individual layer thicknesses. Thick amorphous Ta layers which are isolated by thick insulating (Ge) layers have a transition at 0.9 K, and it is noted that for thinner isolated layers {ital T}{sub {ital c}} approaches zero as the resistance per square approaches the quantum resistance {ital h}/(2{ital e}){sup 2}. However, the transition temperature is enhanced in samples with thin Ge layers, and in films with Ta layers thinner than 1.5 nm {ital T}{sub {ital c}} rises to near 3 K. The enhancement is consistent with a proximity effect involving layers of a Ta-Ge alloy at the layer boundary. {copyright} {ital 1996 The American Physical Society.}

• OSTI ID: 284705
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 22 Vol. 53; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
GERMANIUM
LAYERS
MULTILAYERS
PROXIMITY EFFECT
SUPERCONDUCTIVITY
TANTALUM
TEMPERATURE RANGE 0000-0013 K
THICKNESS
TRANSITION TEMPERATURE