Structural and spectroscopic investigations of CdS/HgS/CdS quantum-dot quantum wells

Journal Article · Wed May 01 00:00:00 EDT 1996 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.53.R13242· OSTI ID:284370

Mews, A; Kadavanich, A V; Banin, U; Alivisatos, A P ^[1]

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1. Department of Chemistry, University of California, Berkeley, California 94720 (United States)

Epitaxial growth in a CdS/HgS heterostructure of nanometer dimensions, prepared by methods of wet chemistry, is demonstrated. High-resolution transmission-electron microscopy is used to determine the shape and crystallinity of this system consisting of a quantum well in a quantum dot. The homogeneous absorption and fluorescence spectra are investigated by transient hole burning and fluorescence line-narrowing spectroscopy. The photophysical measurements provide evidence for charge-carrier localization within the HgS well. {copyright} {ital 1996 The American Physical Society.}

• OSTI ID: 284370
• Journal Information: Physical Review, B: Condensed Matter, Vol. 53, Issue 20; Other Information: PBD: May 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM SULFIDES
TRANSMISSION ELECTRON MICROSCOPY
MERCURY SULFIDES
MORPHOLOGY
HETEROJUNCTIONS
ABSORPTION SPECTROSCOPY
FLUORESCENCE SPECTROSCOPY
ELECTRONIC STRUCTURE
CRYSTAL STRUCTURE
QUANTUM DOTS
QUANTUM WELLS
EPITAXIAL LAYERS