Studies on compensated Cu-Cr-Al spinel oxide semiconductors
Journal Article
·
· Journal of Solid State Chemistry
- Indian Institute of Technology, Kharagpur (India)
Electrical resistivity {rho} and thermoelectric power {alpha} measurements were carried out in air on CuCr{sub 2-x}Al{sub x}O{sub 4} (0.06{<=}x{<=} 0.10) spinel oxides in the temperature range 300-675 K. Carrier concentration (n), optical phonon frequency {gamma}{sub 0}, and mobility {mu} values have been calculated from resistivity and thermoelectric power data. The results show that CuCr{sub 2-x}Al{sub x}O{sub 4} spinel oxides are compensated semiconductors and the total compensation of the hole carriers by electrons occur when 0.09 chromium ions are replaced by aluminum ions.
- OSTI ID:
- 283015
- Journal Information:
- Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Journal Issue: 2 Vol. 120; ISSN 0022-4596; ISSN JSSCBI
- Country of Publication:
- United States
- Language:
- English
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