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Structure of epitaxial thin TiO{sub {ital x}} films on W(110) as studied by low energy electron diffraction and scanning tunneling microscopy

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
DOI:https://doi.org/10.1116/1.588413· OSTI ID:280143
; ; ;  [1]
  1. Environmental Molecular Science Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

We have studied the growth and structure of thin TiO{sub {ital x}} films on W(110) using Auger electron spectroscopy, low energy electron diffraction (LEED), and scanning tunneling microscopy (STM). The procedure used to grow these films includes the deposition of Ti metal onto the W(110) surface followed by a saturation oxygen exposure. LEED and STM reveal that several different ordered TiO{sub {ital x}} film structures can result depending upon the initial amount of Ti deposited and the final annealing temperature. Specifically, the oxidation and anneal to 1350 K of a one monolayer (ML) film of Ti resulted in the formation of a strained ML structure that has a distorted hexagonal lattice and long-range order as observed by LEED and STM. The epitaxial relationship of this 1 ML TiO{sub {ital x}} structure with the W(110) substrate is found to occur with a Nishiyama{endash}Wassermann orientation. {copyright} {ital 1996 American Vacuum Society}

Research Organization:
Pacific Northwest National Laboratory
DOE Contract Number:
AC06-76RL01830
OSTI ID:
280143
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 2 Vol. 14; ISSN JVTBD9; ISSN 0734-211X
Country of Publication:
United States
Language:
English

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