Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates
- Materials Science Department, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801 (United States)
The evolution of surface roughness on epitaxial Si films grown at 300{degree}C by ultrahigh vacuum ion-beam sputter deposition onto nominally singular, [100]-, and [110]-miscut Si(001) is inconsistent with conventional scaling and hyperscaling laws for kinetic roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contrary to previous high-temperature growth results, the presence of steps during deposition at 300{degree}C increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughness on vicinal substrates. {copyright} {ital 1996 The American Physical Society.}
- OSTI ID:
- 279779
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 53, Issue 12; Other Information: PBD: Mar 1996
- Country of Publication:
- United States
- Language:
- English
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