Recrystallization of high energy As-implanted GaAs studied by transmission electron microscopy
- Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 (United States)
- Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, ACT 0200 Canberra (Australia)
- Institute of Experimental Physics, Warsaw University, 00-681 Warsaw (Poland)
Ion implantation damage and the regrowth process during thermal annealing of 2 MeV As-ion-implanted GaAs were studied by transmission electron microscopy. With low-temperature annealing, a high denisty of stacking faults was formed during the recrystallization process, but they were rarely observed with high-temperature annealing. At intermediate temperatures, a much lower denisty of stacking faults was generated at the upper interface between the buried amorphous layer and the crystal than that at the lower interface, where a higher concentration of as-implanted arsenic exists. Based on the observed experimental results, an atomic model is proposed to explain the formation of stacking faults induced by As clusters. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 278897
- Journal Information:
- Applied Physics Letters, Vol. 68, Issue 11; Other Information: PBD: Mar 1996
- Country of Publication:
- United States
- Language:
- English
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