A pixel segmented silicon strip detector for ultra fast shaping at low noise and low power consumption
- NCSR Demokritos, Athens (Greece). Microelectronics Inst.
A new radiation imaging device is proposed based on strips segmented into small pixels. Every pixel contains a submicron transistor that is normally biased in weak inversion. The ionization charge, upon collection by the pixel, changes the bias of the transistor to strong inversion and supplies a current up to several tens of a {micro}A. This is a consequence of the small pixel capacitance (12 fF). The drains and sources of the transistors on the same row and column are shorted to bus lines that effectively become the Y and X coordinates. These bus lines are connected to the off chip ICON amplifiers to provide a 10 ns peaking time at a noise of about 150 electrons and 1 nW power consumption, for a 10x10 cm{sup 2} detector and a MIP excitation. The noise performance is dominated by the ICON transistors. The cross talk between adjacent strips can be kept at a few percentage points provided a low transistor bias current is used.
- OSTI ID:
- 277620
- Report Number(s):
- CONF-951073-; ISSN 0018-9499; TRN: 96:018073
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 43, Issue 3Pt2; Conference: IEEE nuclear science symposium and medical imaging conference, San Francisco, CA (United States), 21-28 Oct 1995; Other Information: PBD: Jun 1996
- Country of Publication:
- United States
- Language:
- English
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