Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Optically-activated GaAs switches for compact accelerators and short pulse sensors

Conference ·
OSTI ID:274175

This paper described research and development of high gain GaAs photoconductive semiconductor switches (PCSS) for two very different types of applications: compact, repetitive accelerators and short pulse, active optical sensors. The accelerator, which is a compact, repetitive system for industrial and military applications, is presently being tested wit a spark gap driven modulator. It is a short pulse, linear induction accelerator (LIA) with an electron diode. Its design goals are: 700kV, 7 KA, 30 ns pulses at 50 Hz. After characterizing the accelerator with the spark gap modulator, it will be tested with a GaAs PCSS modulator, which is under construction. Forty-eight, 2-inch diameter PCSS will switch 70 kA in a 250 kV coaxial Blumlein to deliver 220 kV, 35 kA, 30 ns pulses to the LIA. One Module (1/8) of the PCSS modulator is being tested presently. Results from these tests and projections for the complete system are discussed. The short pulse sensors are for military and commercial applications in optical and electrical range sensing, 3D laser radar, and high speed photography. The highest optical power produced with PCSS-driven laser diode arrays is presently 50 kW in 75 ps wide pulses or 12 kW in 1 ns wide pulses. A variety of sizes of GaAs PCSS are being tested around voltage and current specifications of several applications. Voltages range from 2 to 100 kV, currents range from 10 to 500 A, and electrical pulse lengths range from 1 to 50 ns. Although the switch specifications for these applications vary greatly, this paper discusses developmental issues of GaAs PCSS which are common to all: fundamental research in high gain GaAs, device longevity, optical triggering, circuit configuration and switch performance.

Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
274175
Report Number(s):
SAND--96-0499C; CONF-960685--4; ON: DE96012942
Country of Publication:
United States
Language:
English

Similar Records

Properties of high gain GaAs switches for pulsed power applications
Conference · Mon Sep 01 00:00:00 EDT 1997 · OSTI ID:634121

Photoconductive semiconductor switches
Journal Article · Mon Mar 31 23:00:00 EST 1997 · IEEE Transactions on Plasma Science · OSTI ID:522404

A compact, repetitive accelerator for military and industrial applications
Technical Report · Tue Mar 31 23:00:00 EST 1998 · OSTI ID:654178