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Title: Synthesis of Ti{sub 3}SiC{sub 2}/SiC and TiSi{sub 2}/SiC composites using displacement reactions in the Ti-Si-C system

Journal Article · · Scripta Materialia
;  [1]; ;  [2]
  1. Univ. of Idaho, Moscow, ID (United States). Dept. of Metallurgy and Mining Engineering
  2. Pacific Northwest Lab., Richland, WA (United States)

This paper reports on efforts to synthesize composites in the Ti-Si-C system. Selection of the composite system(s) was based on the Ti-Si-C ternary equilibrium-phase diagram. However, interest in the Ti-Si-C system was motivated by recent reports of not-so-brittle behavior of the complex ternary phase Ti{sub 3}SiC{sub 2}. Apparently, Ti{sub 3}SiC{sub 2} is a soft ceramic compound, like BN or graphite in its behavior. It has a layered crystal structure (D{sub oh}{sup 4}-P6{sub 3}/mmc, hexagonal), a melting temperature greater than 3000C, and a density of 4.53 g/cm{sup 3}. Reportedly, its microhardness as a function of load indicates ductile, or not-so-brittle, behavior, and is anisotropic. The Knoop hardness is about 3.5 GPa when measured along (hk0)(uv0) (parallel to soft, TiC-like orientation) and about 13 GPa when measured in other orientations (perpendicular to TiC-like orientation). Bulk, polycrystalline Ti{sub 3}SiC{sub 2} has a Vickers hardness of 6 to 7 GPa.

DOE Contract Number:
AC06-76RL01830
OSTI ID:
271720
Journal Information:
Scripta Materialia, Vol. 34, Issue 12; Other Information: PBD: 15 Jun 1996
Country of Publication:
United States
Language:
English

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