Influence of irradiation spectrum and implanted ions on the amorphization of ceramics
- Oak Ridge National Laboratory, TN (United States)
Amorphization cannot be tolerated in ceramics proposed for fusion energy applications due to the accompanying large volume change ({approx} 15% in SiC) and loss of strength. Ion beam irradiations at temperatures between 200 K and 450 K were used to examine the likelihood of amorphization in ceramics being considered for the structure (SiC) and numerous diagnostic and plasma heating systems (MgAl{sub 2}O{sub 4}, Al{sub 2}O{sub 3}, MgO, Si{sub 3}N{sub 4}) in fusion energy systems. The microstructures were examined following irradiation using cross-section transmission electron microscopy. The materials in this study included ceramics with predominantly covalent bonding (SiC, Si{sub 3}N{sub 4}) and predominantely ionic bonding (MgAl{sub 2}O{sub 4}, Al{sub 2}O{sub 3}, MgO). The samples were irradiated with a variety of ion beams (including some simultaneous dual ion beam irradiations) in order to investigate possible irradiation spectrum effects. The ion energies were >0.5 MeV in all cases, so that the displacement damage effects could be examined in regions well separated from the implanted ion region.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- OSTI ID:
- 270452
- Report Number(s):
- DOE/ER--0313/19; ORNL/M--5023; ON: DE96010874
- Country of Publication:
- United States
- Language:
- English
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