Morphology of anodically etched Si(111) surfaces: A structural comparison of NH{sub 4}F versus HF etching
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- Universitaet Ulm (Germany)
We present a comparative scanning tunneling microscopy (STM) study on the porous layer formation in two different fluoride containing solution, HF/ethanol and concentrated NH{sub 4}F solution. After etching in dilute HF solution the samples display a high density of micropores with typical diameters ranging from 5 to 25 nm, while NH{sub 4}F treated surfaces display shallow macropores of several hundred nm in diameter. These structural differences are discussed by comparing the different activity of both solutions for chemical etching of Si in the adsence of an external potential, which provides an additional reaction channel also under anodic conditions. 21 refs., 3 figs.
- OSTI ID:
- 263452
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 12; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
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