Photoelectron spectroscopic study of small silicon oxide clusters: SiO{sub 2}, Si{sub 2}O{sub 3}, and Si{sub 2}O{sub 4}

Journal Article · Thu May 23 04:00:00 EDT 1996 · Journal of Physical Chemistry

DOI:https://doi.org/10.1021/jp9602538· OSTI ID:263211

Wang, L S ^[1]; Wu, H ^[1]; Desai, S R; Fan, J; Colson, S D ^[2]

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1. Washington State Univ., Richland, WA (United States)
2. Pacific Northwest National Lab., Richland, WA (United States)

We present an anion photoelectron spectroscopic study of SiO{sub 2}, Si{sub 2}O{sub 3}, and Si{sub 2}O{sub 4}. We obtained the photoelectron spectra of these small silicon oxide anion clusters at 4.66 eV photon energy. All the spectra show broad photodetachment features, suggesting that there is considerable geometry change between the anion and the neutral. The vertical detachment energies are determined to be 2.76 (0.10), 2.75 (0.10), and 3.63 (0.1) eV for SiO{sub 2}{sup -}, Si{sub 2}O{sub 3}{sup -}, and Si{sub 2}O{sub 4}{sup -}, respectively. The spectrum of Si{sub 2}O{sub 3}{sup -} shows a weak feature at lower binding energy, suggesting existence of another isomer. The spectra of GeO{sub 2}{sup -} and Ge{sub 2}O{sub 3}{sup -} are also obtained and are compared to the silicon analogs. They are similar to the silicon oxide species, but both have higher detachment energies, 2.93 (0.07) eV for GeO{sub 2}{sup -} and 3.01 (0.07) eV for Ge{sub 2}O{sub 3}{sup -}. The Ge{sub 2}O{sub 3}{sup -} spectrum is consistent with only one isomer. The structure and bonding of these small oxide clusters are discussed. 29 refs., 3 figs., 1 tab.

• DOE Contract Number: AC06-76RL01830
• OSTI ID: 263211
• Journal Information: Journal of Physical Chemistry, Journal Name: Journal of Physical Chemistry Journal Issue: 21 Vol. 100; ISSN JPCHAX; ISSN 0022-3654
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
ANIONS
BINDING ENERGY
ELECTRON SPECTRA
PHOTOELECTRON SPECTROSCOPY
SILICON OXIDES
SOLID CLUSTERS
STRUCTURAL CHEMICAL ANALYSIS