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Title: Analysis of grain boundary structure in aluminum thin films by orientation imaging microscopy

Book ·
OSTI ID:260497
; ;  [1];  [2]
  1. TexSEM Labs Inc., Provo, UT (United States)
  2. Carnegie Mellon Univ., Pittsburgh, PA (United States)

A new technique for analyzing the crystallographic structure of materials has recently been extended to investigate thin film structures. The technique, known as orientation imaging microscopy or OIM, is an SEM based imaging technique which automatically obtains complete crystallographic information over the surface of a specimen. Thousands of electron back-scatter diffraction (EBSD) patterns (EBSPs) obtained in the SEM are analyzed automatically by a computer which reconstructs an image from the information obtained. In this research, OIM was used to investigate the crystallographic structure of grain boundaries in thin film aluminum. Many researchers have recognized the importance of grain boundary structure in interconnect failures and recent literature reflects the prevailing theories. This paper focuses upon the utility of OIM in investigating thin film structures. Thin films covering a large surface area and thin interconnect lines have each been investigated using this technique. Strong (111) fiber textures were evident in all materials measured. The degree of texturing differed from specimen to specimen. Coincident site lattice theory (CSL) is used to determine if certain special boundaries exist in the microstructure. The grain morphology of an aluminum thin film is sometimes quite distinct if grains are defined by 2 degrees of misorientation rather than 15, for example. It is concluded that OIM enables a complete characterization of thin film structures and provides valuable information useful in identifying grain boundary types which are prone to electromigration or stress-voiding failures.

OSTI ID:
260497
Report Number(s):
CONF-951156-; ISBN 0-87170-554-0; TRN: IM9632%%153
Resource Relation:
Conference: ISTFA `95: 21. international symposium for testing and failure analysis, Santa Clara, CA (United States), 5-10 Nov 1995; Other Information: PBD: 1995; Related Information: Is Part Of ISTFA `95: Conference proceedings; PB: 381 p.
Country of Publication:
United States
Language:
English