Photodoping of graphene with long-lived electrons by interfacing with Janus WSSe

Zheng, Ting; Lin, Yu-Chuan; Ni, Zhenhua; Xiao, Kai; Zhao, Hui

doi:10.1039/D5NH00337G

Photodoping of graphene with long-lived electrons by interfacing with Janus WSSe

Journal Article · Wed Jul 30 00:00:00 EDT 2025 · Nanoscale Horizons

DOI:https://doi.org/10.1039/D5NH00337G· OSTI ID:2586831

^[1]; Lin, Yu-Chuan ^[2]; ^[3]; ^[4]; ^[5]

Southeast Univ., Nanjing (China); Univ. of Kansas, Lawrence, KS (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); National Chiao Tung Univ., Hsinchu (Taiwan)
Southeast Univ., Nanjing (China)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Univ. of Kansas, Lawrence, KS (United States)

The performance of semiconductor optoelectronic devices depends on efficient photodoping of active materials, where optical excitation generates photocarriers. Despite more than two decades of research, efficient photodoping in graphene remains elusive due to the formation of neutral excitons with ultrashort lifetimes. Here, by interfacing graphene with a Janus WSSe monolayer, we achieve unipolar photodoping of graphene with long-lived carriers. The Janus monolayer was synthesized via selenium implantation of WS₂ monolayers grown by chemical vapor deposition. We fabricated the heterostructure by transferring a mechanically exfoliated graphene monolayer onto the Se-terminated side of WSSe. Through photoluminescence and transient absorption spectroscopy, we demonstrate that photoexcited electrons in WSSe transfer efficiently to graphene, while a portion of the photoexcited holes remains confined in WSSe due to its built-in electric field. This charge separation leads to a net electron population in graphene. These electrons exhibit extended lifetimes due to spatial separation from their recombination partners, offering a promising route to enhancing the performance of graphene-based optoelectronic devices.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: AC05-00OR22725; SC0020995

OSTI ID:: 2586831

Journal Information:: Nanoscale Horizons, Journal Name: Nanoscale Horizons Journal Issue: 10 Vol. 10; ISSN 2055-6764; ISSN 2055-6756

Publisher:: Royal Society of Chemistry (RSC)Copyright Statement

Country of Publication:: United States

Language:: English

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