The nitrogen-vacancy (NV) centre in diamond is a premier solid-state defect for quantum information processing and metrology. An integrated diamond quantum device harnesses the collective properties of multiple NV centres, enabling room-temperature quantum computing and sensing. While large-scale devices are poised to fill an important gap in the burgeoning quantum technology landscape, their practical realisation has not been achieved using current top-down fabrication techniques such as ion implantation. Consequently, this necessitates the development of a bottom-up fabrication technique, which is scalable, deterministic, and possesses atomic-scale precision. Informed by existing methods for fabricating phosphorous defect qubits in silicon, we envision a hydrogen depassivation lithography technique for atomically-precise manufacturing of nitrogen-vacancy centres in diamond. This perspective article outlines a viable multi-step procedure for realising scalable fabrication of diamond quantum devices and identifies the key challenges in its development.
Oberg, Lachlan, Weber, Cedric, Yang, Hung-Hsiang, Klesse, Wolfgang M., Reinke, Philipp, Gallo, Santiago Corujeira, Stacey, Alastair, Pakes, Christopher I., & Doherty, Marcus W. (2025). Bottom-up fabrication of scalable room-temperature diamond quantum computing and sensing technologies. Materials for Quantum Technology, 5(3). https://doi.org/10.1088/2633-4356/ade359
@article{osti_2586657,
author = {Oberg, Lachlan and Weber, Cedric and Yang, Hung-Hsiang and Klesse, Wolfgang M. and Reinke, Philipp and Gallo, Santiago Corujeira and Stacey, Alastair and Pakes, Christopher I. and Doherty, Marcus W.},
title = {Bottom-up fabrication of scalable room-temperature diamond quantum computing and sensing technologies},
annote = {The nitrogen-vacancy (NV) centre in diamond is a premier solid-state defect for quantum information processing and metrology. An integrated diamond quantum device harnesses the collective properties of multiple NV centres, enabling room-temperature quantum computing and sensing. While large-scale devices are poised to fill an important gap in the burgeoning quantum technology landscape, their practical realisation has not been achieved using current top-down fabrication techniques such as ion implantation. Consequently, this necessitates the development of a bottom-up fabrication technique, which is scalable, deterministic, and possesses atomic-scale precision. Informed by existing methods for fabricating phosphorous defect qubits in silicon, we envision a hydrogen depassivation lithography technique for atomically-precise manufacturing of nitrogen-vacancy centres in diamond. This perspective article outlines a viable multi-step procedure for realising scalable fabrication of diamond quantum devices and identifies the key challenges in its development.},
doi = {10.1088/2633-4356/ade359},
url = {https://www.osti.gov/biblio/2586657},
journal = {Materials for Quantum Technology},
issn = {ISSN 2633-4356},
number = {3},
volume = {5},
place = {United States},
publisher = {IOP Publishing},
year = {2025},
month = {07}}