Direct‐Write Printed Contacts to Layered and 2D Materials

Jois, Sharadh; Lee, Erica; Li, Philip; Esatu, Tsegereda; Fleischer, Jason; Quinn, Edwin; Gu, Genda; Kulichenko, Vadym; Balicas, Luis; Le, Son T.; LaGasse, Samuel W.; Hanbicki, Aubrey T.; Friedman, Adam L.

doi:10.1002/aelm.202400927

Direct‐Write Printed Contacts to Layered and 2D Materials

Journal Article · Fri Jul 18 00:00:00 EDT 2025 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.202400927· OSTI ID:2583885

^[1]; Lee, Erica ^[1]; Li, Philip ^[1]; ^[1]; Fleischer, Jason ^[1]; Quinn, Edwin ^[1]; ^[2]; ^[3]; ^[4]; ^[1]; ^[1]; ^[1]; ^[1]

Laboratory for Physical Sciences, College Park, MD (United States)
Brookhaven National Laboratory (BNL), Upton, NY (United States); Stony Brook University, NY (United States)
National High Magnetic Field Laboratory, Tallahassee, FL (United States)
National High Magnetic Field Laboratory, Tallahassee, FL (United States); Florida State University, Tallahassee, FL (United States)

Advancements in fabrication methods have shaped new computing device technologies. Among these methods, depositing electrical contacts to the channel material is fundamental to device characterization. Novel layered and 2D materials are promising for next-generation computing electronic channel materials. Direct-write printing of conductive inks is introduced as a surprisingly effective, significantly faster, and cleaner method to contact different classes of layered materials, including graphene (semi-metal), MoS₂ (semiconductor), Bi-2212 (superconductor), and Fe₅GeTe₂ (metallic ferromagnet). Based on the electrical response, the quality of the printed contacts is comparable to what is achievable with resist-based lithography techniques. These devices are tested by sweeping gate voltage, temperature, and magnetic field to show that the materials remain pristine post-processing. This work demonstrates that direct-write printing is an agile method for prototyping and characterizing the electrical properties of novel layered materials.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: National Science Foundation (NSF); Office of Naval Research (ONR); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: SC0002613; SC0012704

OSTI ID:: 2583885

Report Number(s):: BNL--228536-2025-JAAM

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 15 Vol. 11; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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