Reductive pathways in molten inorganic salts enable colloidal synthesis of III-V semiconductor nanocrystals

Ondry, Justin C.; Zhou, Zirui; Lin, Kailai; Gupta, Aritrajit; Chang, Jun Hyuk; Wu, Haoqi; Jeong, Ahhyun; Hammel, Benjamin F.; Wang, Di; Fry, H. Christopher; Yazdi, Sadegh; Dukovic, Gordana; Schaller, Richard D.; Rabani, Eran; Talapin, Dmitri V.

doi:10.1126/science.ado7088

Reductive pathways in molten inorganic salts enable colloidal synthesis of III-V semiconductor nanocrystals

Journal Article · Fri Oct 25 00:00:00 EDT 2024 · Science

DOI:https://doi.org/10.1126/science.ado7088· OSTI ID:2572884

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University of Chicago, IL (United States)
University of California, Berkeley, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
University of Colorado, Boulder, CO (United States)
Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials (CNM)
Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials (CNM); Northwestern University, Evanston, IL (United States)
University of California, Berkeley, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Tel Aviv University, Tel Aviv (Israel)
University of Chicago, IL (United States); Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials (CNM)

Colloidal quantum dots, with their size-tunable optoelectronic properties and scalable synthesis, enable applications in which inexpensive high-performance semiconductors are needed. Synthesis science breakthroughs have been key to the realization of quantum dot technologies, but important group III–group V semiconductors, including colloidal gallium arsenide (GaAs), still cannot be synthesized with existing approaches. The high-temperature molten salt colloidal synthesis introduced in this work enables the preparation of previously intractable colloidal materials. Here, we directly nucleated and grew colloidal quantum dots in molten inorganic salts by harnessing molten salt redox chemistry and using surfactant additives for nanocrystal shape control. Synthesis temperatures above 425°C are critical for realizing photoluminescent GaAs quantum dots, which emphasizes the importance of high temperatures enabled by molten salt solvents. We generalize the methodology and demonstrate nearly a dozen III-V solid-solution nanocrystal compositions that have not been previously reported.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: AC02-05CH11231; AC02-06CH11357

OSTI ID:: 2572884

Journal Information:: Science, Journal Name: Science Journal Issue: 6720 Vol. 386; ISSN 1095-9203; ISSN 0036-8075

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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