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Dynamics of Thermally Driven Domain Transformation in Ferroelectric Thin Films

Journal Article · · Physical Review Letters
An important feature in ultrathin ferroelectric films is the spontaneous formation of nanoscale polarization domain patterns. Epitaxial strain can greatly increase the ferroelectric transition temperature such that films can be in the ferroelectric state during growth. On the other hand, depolarization fields compete with ferroelectricity in ultrathin films, and, consequently, the optimal domain configuration during growth is a moving target. Under these conditions it is readily possible for a grown film to be in a nonequilibrium domain configuration. As the energy landscape in the system is quite complex, the relaxation dynamics by which a system can evolve towards the true equilibrium configuration are also quite interesting. Here, to capture the details of this process we used Bragg-geometry x-ray photon correlation spectroscopy (XPCS), in which x-ray scattering speckle patterns contain the information from the domain arrangements inside the film. With modest heating (โˆผ15โข0โ€‰ยฐC) domain relaxation from ๐‘‡ (tetragonal) to ๐‘€๐ถ (monoclinic) was observed in BaTiO3 films grown on ultrathin ferroelectric PbTiO3 layers. Two-time correlation analysis reveals fascinating details associated with sticking points and reversals in the process.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States); Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
National Science Foundation; National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
Grant/Contract Number:
AC02-06CH11357; SC0012704
OSTI ID:
2572413
Alternate ID(s):
OSTI ID: 2574005
Report Number(s):
BNL--228433-2025-JAAM
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 5 Vol. 134; ISSN 1079-7114; ISSN 0031-9007
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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