Excitonic Shockley-Read-Hall recombination in organic semiconductors

Giebink, Noel C.; Forrest, Stephen R.

doi:10.1103/physrevapplied.21.064019

Excitonic Shockley-Read-Hall recombination in organic semiconductors

Journal Article · Mon Jun 10 00:00:00 EDT 2024 · Physical Review Applied

DOI:https://doi.org/10.1103/physrevapplied.21.064019· OSTI ID:2565865

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University of Michigan, Ann Arbor, MI (United States); University of Michigan
University of Michigan, Ann Arbor, MI (United States)

Trap-mediated recombination influences the performance of a wide range of electronic devices. The well-known Shockley-Read-Hall (SRH) expression for inorganic semiconductors is often invoked to describe the recombination rate in organic materials, although without a clear understanding of how its parameters relate to the underlying material properties or how it should be modified to account for the finite lifetime of exciton intermediates in, for example, the doped emissive layer of an organic light-emitting diode (OLED). Here, we formalize SRH recombination for organic semiconductors based on diffusive trapping and Langevin recombination. We show that including the exciton state suppresses the recombination rate in host-guest systems with type II energy level alignment whenever the interfacial gap between the host and guest molecular orbitals is comparable to the exciton energy. Furthermore, these results quantify the balance between bimolecular and trap-mediated recombination in doped OLED emissive layers, and indicate that devices with type II host-guest pairings can, in principle, beat the thermodynamic limit of their neat guest counterparts.

View Accepted Manuscript (DOE)

Research Organization:: University of Michigan, Ann Arbor, MI (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: EE0009694; SC0024142

OSTI ID:: 2565865

Alternate ID(s):: OSTI ID: 2474132

Journal Information:: Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 6 Vol. 21; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
OLED
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Shockley-Read-Hall
host-guest
organic semiconductor
recombination
thermodynamic limit
trap
trap-mediated recombination

Excitonic Shockley-Read-Hall recombination in organic semiconductors

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