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Improving Charge Transport and Environmental Stability of Carbohydrate‐Bearing Semiconducting Polymers in Organic Field‐Effect Transistors

Journal Article · · Advanced Electronic Materials
 [1];  [1];  [2];  [3];  [1];  [4];  [2];  [1]
  1. Department of Chemistry and Biochemistry University of Windsor Windsor Ontario N9B 3P4 Canada
  2. School of Polymer Science and Engineering The University of Southern Mississippi Hattiesburg MS 39406 USA
  3. Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
  4. Organic Bioelectronics Research Group Max Planck Institute for Polymer Research 55182 Mainz Germany

Abstract

Semiconducting polymers offer synthetic tunability, good mechanical properties, and biocompatibility, enabling the development of soft technologies previously inaccessible. Side‐chain engineering is a versatile approach for optimizing these semiconducting materials, but minor modifications can significantly impact material properties and device performance. Carbohydrate side chains have been previously introduced to improve the solubility of semiconducting polymers in greener solvents. Despite this achievement, these materials exhibit suboptimal performance and stability in field‐effect transistors. In this work, structure–property relationships are explored to enhance the device performance of carbohydrate‐bearing semiconducting polymers. Toward this objective, a series of isoindigo‐based polymers with carbohydrate side chains of varied carbon‐spacer lengths is developed. Material and device characterizations reveal the effects of side chain composition on solid‐state packing and device performance. With this new design, charge mobility is improved by up to three orders of magnitude compared to the previous studies. Processing–property relationships are also established by modulating annealing conditions and evaluating device stability upon air exposure. Notably, incidental oxygen‐doping effects lead to increased charge mobility after 10 days of exposure to ambient air, correlated with decreased contact resistance. Bias stress stability is also evaluated. This work highlights the importance of understanding structure–property relationships toward the optimization of device performance.

Sponsoring Organization:
USDOE
Grant/Contract Number:
NONE; AC02-05CH11231
OSTI ID:
2564476
Alternate ID(s):
OSTI ID: 2479512
Journal Information:
Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 6 Vol. 11; ISSN 2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)Copyright Statement
Country of Publication:
United States
Language:
English

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