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Fault localization in a microfabricated surface ion trap using diamond nitrogen-vacancy center magnetometry

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/5.0234269· OSTI ID:2564026
 [1];  [2];  [2];  [3];  [2];  [2]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Massachusetts Institute of Technology (MIT), Lexington, MA (United States). Lincoln Laboratory
  2. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
  3. Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,
+ Show Author Affiliations
Here, as quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is especially true for trapped-ion quantum computing. As trapped-ion quantum computing aims to scale to thousands of ions, the electrode numbers are growing to several hundred, with likely integrated photonic components also adding to the electrical and fabrication complexity, making faults even harder to locate. In this work, we used a high-resolution quantum magnetic imaging technique, based on nitrogen-vacancy centers in diamond, to investigate short-circuit faults in an ion trap chip. We imaged currents from these short-circuit faults to ground and compared them to intentionally created faults, finding that the root cause of the faults was failures in the on-chip trench capacitors. This work, where we exploited the performance advantages of a quantum magnetic sensing technique to troubleshoot a piece of quantum computing hardware, is a unique example of the evolving synergy between emerging quantum technologies to achieve capabilities that were previously inaccessible.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
Grant/Contract Number:
NA0003525
OSTI ID:
2564026
Report Number(s):
SAND--2025-05284J
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 125; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
Crystallographic defects
Ion-trap
Magnetism
Microscopy
Nanotechnology
Optically detected magnetic resonance
Quantum computing
Quantum information
Quantum mechanical systems and processes
Short circuit