Switching Modes for Reduction of Peak Voltage Transients in GaN-Based Three Level ANPC Inverter

Satpathy, Subhransu; Das, Partha Pratim; Bhattacharya, Subhashish; Veliadis, Victor

doi:10.1109/tia.2024.3447608

Switching Modes for Reduction of Peak Voltage Transients in GaN-Based Three Level ANPC Inverter

Journal Article · Thu Aug 22 00:00:00 EDT 2024 · IEEE Transactions on Industry Applications

DOI:https://doi.org/10.1109/tia.2024.3447608· OSTI ID:2562640

^[1]; ^[1]; ^[1]; ^[1]

North Carolina State University, Raleigh, NC (United States)

The switching pole voltage can transition between P,0, and N states in a three-level active neutral point clamped (ANPC) inverter. State transitions between 0-P and 0-N can be realized with different switching modes. Three switching modes- Short¹, Short², and Full are studied considering the effect of capacitive current paths. The role of clamping and inner switch on/off conditions is determined using simplified equivalent circuit models. Short² with clamping switch off is beneficial for turn-on overvoltage suppression but results in high turn-off overvoltage. Full mode with a parallel current sharing path is effective for turn-off overvoltage suppression but leads to high turn-on overvoltage. Hence, a Modified Full mode is proposed to achieve the simultaneous objective of overvoltage suppression at both turn-on and turn-off transient during high load currents. This benefits 3L ANPC operation at a low power factor with a high load current at fundamental voltage zero crossing points. Here, a 650V GaN-based three-level ANPC inverter prototype is designed and used to evaluate the switching modes and overvoltage suppression strategies through double pulse tests and continuous operation.

View Accepted Manuscript (DOE)

Research Organization:: North Carolina State University, Raleigh, NC (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Office of Sustainable Transportation. Vehicle Technologies Office (VTO)

Grant/Contract Number:: EE0008705

OSTI ID:: 2562640

Journal Information:: IEEE Transactions on Industry Applications, Journal Name: IEEE Transactions on Industry Applications Journal Issue: 6 Vol. 60; ISSN 0093-9994

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

References (26)

New FOM-Based Performance Evaluation of 600/650 V SiC and GaN Semiconductors for Next-Generation EV Drives Cittanti, Davide; Vico, Enrico; Bojoi, Iustin Radu IEEE Access, Vol. 10 https://doi.org/10.1109/ACCESS.2022.3174777	journal	January 2022
Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation Chen, Hongwei; Ai, Sheng; Nie, Ziling IEEE Access, Vol. 11 https://doi.org/10.1109/ACCESS.2023.3245817	journal	January 2023
Mechanism and Analytical Model for Switching Transient Process in SiC 3L-ANPC Converter Wang, Lina; Chang, Junming; Yuan, Zezhuo IEEE Access, Vol. 12 https://doi.org/10.1109/ACCESS.2024.3376681	journal	January 2024
Experimental Study Based Switching Sequence for Reduction of Peak Voltage Transients in GaN-based 3L-ANPC Inverter Satpathy, Subhransu; Das, Partha Pratim; Bhattacharya, Subhashish 2024 IEEE Applied Power Electronics Conference and Exposition (APEC) https://doi.org/10.1109/APEC48139.2024.10509060	conference	February 2024
On Decoupling Capacitor Size in GaN-Based Power Converters Horowitz, Logan; Pilawa-Podgurski, Robert C. N. 2022 IEEE 23rd Workshop on Control and Modeling for Power Electronics (COMPEL) https://doi.org/10.1109/COMPEL53829.2022.9830000	conference	June 2022
A Generalized Approach to Determine the Switching Lifetime of a GaN FET Bahl, Sandeep R.; Baltazar, Francisco; Xie, Yong 2020 IEEE International Reliability Physics Symposium (IRPS) https://doi.org/10.1109/IRPS45951.2020.9129631	conference	April 2020
Design and Implementation of a GaN-Based, 100-kHz, 102-W/in³Single-Phase Inverter Zhao, Chongwen; Trento, Bradford; Jiang, Ling IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 4, Issue 3 https://doi.org/10.1109/JESTPE.2016.2573758	journal	September 2016
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges Jones, Edward A.; Wang, Fei Fred; Costinett, Daniel IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 4, Issue 3 https://doi.org/10.1109/JESTPE.2016.2582685	journal	September 2016
Methodology of Low Inductance Busbar Design for Three-Level Converters Gui, Handong; Chen, Ruirui; Zhang, Zheyu IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 9, Issue 3 https://doi.org/10.1109/JESTPE.2020.2999403	journal	June 2021
Investigation of Switching Oscillations for Silicon Carbide MOSFETs in Three-Level Active Neutral-Point-Clamped Inverters Chen, Mengxing; Pan, Donghua; Wang, Huai IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 9, Issue 4 https://doi.org/10.1109/JESTPE.2020.3014742	journal	August 2021
Optimizing PCB Layout for HV GaN Power Transistors Persson, Eric IEEE Power Electronics Magazine, Vol. 10, Issue 2 https://doi.org/10.1109/MPEL.2023.3275311	journal	June 2023
A High Efficiency and Low Cost ANPC Inverter Using Hybrid Si/SiC Switches Woldegiorgis, Dereje; Wu, Yuheng; Wei, Yuqi IEEE Open Journal of Industry Applications, Vol. 2 https://doi.org/10.1109/OJIA.2021.3091549	journal	January 2021
Performance Evaluation of a Three-Level ANPC Photovoltaic Grid-Connected Inverter With 650-V SiC Devices and Optimized PWM Barater, Davide; Concari, Carlo; Buticchi, Giampaolo IEEE Transactions on Industry Applications, Vol. 52, Issue 3 https://doi.org/10.1109/TIA.2016.2514344	journal	May 2016
Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng IEEE Transactions on Industry Applications, Vol. 54, Issue 2 https://doi.org/10.1109/TIA.2017.2777417	journal	March 2018
Three-Level Two-Stage Decoupled Active NPC Converter With Si IGBT and SiC MOSFET Zhang, Di; He, Jiangbiao; Madhusoodhanan, Sachin IEEE Transactions on Industry Applications, Vol. 54, Issue 6 https://doi.org/10.1109/TIA.2018.2851561	journal	November 2018
The Active NPC Converter and Its Loss-Balancing Control Bruckner, T.; Bernet, S.; Guldner, H. IEEE Transactions on Industrial Electronics, Vol. 52, Issue 3 https://doi.org/10.1109/TIE.2005.847586	journal	June 2005
New Modulation Scheme for Three-Level Active Neutral-Point-Clamped Converter With Loss and Stress Reduction Jiao, Yang; Lee, Fred C. IEEE Transactions on Industrial Electronics, Vol. 62, Issue 9 https://doi.org/10.1109/TIE.2015.2405505	journal	September 2015
A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing Long, Xiao; Liang, Wu; Jun, Zhao IEEE Transactions on Industrial Electronics, Vol. 66, Issue 4 https://doi.org/10.1109/TIE.2018.2842768	journal	April 2019
Switching Performance Optimization of a High Power High Frequency Three-Level Active Neutral Point Clamped Phase Leg Jiao, Yang; Lu, Sizhao; Lee, Fred C. IEEE Transactions on Power Electronics, Vol. 29, Issue 7 https://doi.org/10.1109/TPEL.2013.2277657	journal	July 2014
A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI Dymond, Harry C. P.; Wang, Jianjing; Liu, Dawei IEEE Transactions on Power Electronics, Vol. 33, Issue 1 https://doi.org/10.1109/TPEL.2017.2669879	journal	January 2018
Tradeoff Study of Heat Sink and Output Filter Volume in a GaN HEMT Based Single-Phase Inverter Gurpinar, Emre; Castellazzi, Alberto IEEE Transactions on Power Electronics, Vol. 33, Issue 6 https://doi.org/10.1109/TPEL.2017.2730038	journal	June 2018
Effects of Junction Capacitances and Commutation Loops Associated With Line-Frequency Devices in Three-Level AC/DC Converters Liu, Bo; Ren, Ren; Jones, Edward A. IEEE Transactions on Power Electronics, Vol. 34, Issue 7 https://doi.org/10.1109/TPEL.2018.2876610	journal	July 2019
Modeling and Mitigation of Multiloops Related Device Overvoltage in Three-Level Active Neutral Point Clamped Converter Gui, Handong; Chen, Ruirui; Zhang, Zheyu IEEE Transactions on Power Electronics, Vol. 35, Issue 8 https://doi.org/10.1109/TPEL.2019.2962621	journal	August 2020
A multivariable turn-on/turn-off switching loss scaling approach for high-voltage GaN HEMTs in a hard-switching half-bridge configuration Hou, Ruoyu; Xu, Jianchun; Chen, Di 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) https://doi.org/10.1109/WiPDA.2017.8170542	conference	October 2017
Design Considerations of a GaN-based Three-Level Traction Inverter for Electric Vehicles Satpathy, Subhransu; Das, Partha Pratim; Bhattacharya, Subhashish 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) https://doi.org/10.1109/WiPDA56483.2022.9955248	conference	November 2022
Datasheet Driven Switching Loss, Turn-ON/OFF Overvoltage, di/dt, and dv/dt Prediction Method for SiC MOSFET Qian, Cheng; Wang, Zhiqiang; Xin, Guoqing IEEE Transactions on Power Electronics, Vol. 37, Issue 8 https://doi.org/10.1109/tpel.2022.3152529	journal	August 2022

Similar Records

Power Layout Design of a GaN HEMTs-Based High-Power High-Efficiency Three-Level ANPC Inverter for 800 V DC Bus System

Journal Article · Thu Jan 18 19:00:00 EST 2024 · IEEE Journal of Emerging and Selected Topics in Industrial Electronics · OSTI ID:2562642

Modeling of Multi-Loops Related Device Turn-On Overvoltage in 3L-ANPC Converters

Conference · Sat Jun 01 00:00:00 EDT 2019 · Workshop on Control and Modeling for Power Electronics (COMPEL) · OSTI ID:1564117

A Six-Phase Space Vector PWM Technique for Wide Bandgap Device-Based Three-Level Inverters

Journal Article · Sun Sep 24 20:00:00 EDT 2023 · IEEE Transactions on Transportation Electrification (Online) · OSTI ID:2562644

Related Subjects

42 ENGINEERING
ANPC
GaN
PWM
switching transients
three-level inverter

Switching Modes for Reduction of Peak Voltage Transients in GaN-Based Three Level ANPC Inverter

Citation Formats

References (26)

Similar Records

Related Subjects