Strong magnetic field dependence of critical current densities and vortex activation energies in an anisotropic clean MgB2 thin film
Journal Article
·
· Solid State Communications
- Institute for Basic Science (IBS), Pohang (Korea, Republic of); Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of)
- Centro Atómico Bariloche (Argentina)
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Temple Univ., Philadelphia, PA (United States)
Here we report the influence of two-band superconductivity on the flux creep and the critical current densities of a MgB2 thin film. The small magnetic penetration depth of λ=50±10 nm at T=4K is related to a clean π-band. We find a high self-field critical current density Jc, which is strongly reduced with applied magnetic field, and attribute this to suppression of the superconductivity in the π-band. The temperature dependence of the creep rate S (T) at low magnetic field can be explained by a simple Anderson–Kim mechanism. The system shows high pinning energies at low field that are strongly suppressed by high field.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
- Grant/Contract Number:
- SC0004410; SC0012704
- OSTI ID:
- 2560726
- Alternate ID(s):
- OSTI ID: 1229372
OSTI ID: 1245228
- Report Number(s):
- BNL--228040-2025-JAAM
- Journal Information:
- Solid State Communications, Journal Name: Solid State Communications Vol. 204; ISSN 0038-1098
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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