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Spin effects in metal halide perovskite semiconductors

Journal Article · · Nanoscale
DOI:https://doi.org/10.1039/d5nr00127g· OSTI ID:2547049
Metal halide perovskite semiconductors (MHSs) are emerging as potential candidates for opto-spintronic applications due to their strong spin–orbit coupling, favorable light emission characteristics and highly tunable structural symmetry. Compared to the significant advancements in the optoelectronic applications of MHSs, the exploration and control of spin-related phenomena remain in their early stages. In this minireview, we provide an overview of the various spin effects observed both in achiral and chiral MHSs, emphasizing their potential for controlling interconversion between spin, charge and light. We specifically highlight the spin selective properties of chiral MHSs through the chirality-induced spin selectivity (CISS) phenomena, which enable innovative functionalities in devices such as spin-valves, spin-polarized light-emitting diodes, and polarized photodetectors. Furthermore, we discuss the prospects of MHSs as spintronic semiconductors and their future development in terms of material design, device architecture and stability.
Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Hybrid Organic-Inorganic Semiconductors for Energy (CHOISE); National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
2547049
Alternate ID(s):
OSTI ID: 2560373
Report Number(s):
NREL/JA--5F00-92755; MainId:94536; UUID:e344467f-9a19-48d3-9121-a2a25ac87de2; MainAdminId:76674
Journal Information:
Nanoscale, Journal Name: Nanoscale Journal Issue: 16 Vol. 17; ISSN 2040-3364
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English

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