Optically Addressable Light Valve Based on a GaN:Mn Photoconductor

Chatterjee, Bikramjit; Ghandiparsi, Soroush; Gottlieb, Miranda S.; Clark, Erin; Jackson, Kathy; Frye, Clint D.; Muir, Ryan D.; Buckley, Brandon W.; Harthcock, Colin; Varley, Joel B.; Harrison, Sara E.; Shao, Qinghui; Voss, Lars F.

doi:10.1021/acsaenm.4c00664

Optically Addressable Light Valve Based on a GaN:Mn Photoconductor

Journal Article · Thu Jan 23 00:00:00 EST 2025 · ACS Applied Engineering Materials

DOI:https://doi.org/10.1021/acsaenm.4c00664· OSTI ID:2556944

^[1]; Ghandiparsi, Soroush ^[1]; Gottlieb, Miranda S. ^[1]; Clark, Erin ^[1]; Jackson, Kathy ^[1]; ^[1]; Muir, Ryan D. ^[1]; Buckley, Brandon W. ^[1]; Harthcock, Colin ^[1]; ^[1]; Harrison, Sara E. ^[1]; Shao, Qinghui ^[1]; ^[1]

Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Semi-insulating manganese-doped gallium nitride (GaN:Mn) layers epitaxially grown on unintentionally doped GaN substrates were used as photoconductors in optically addressable light valves (OALVs) to withstand higher operational laser fluences compared to current state-of-the-art OALVs where bismuth silicon oxide (BSO; Bi₁₂SiO₂₀) layers are used as photoconductors. GaN:Mn promises to be an exciting material for optoelectronic operations due to its large laser fluence handling capability and photoresponsivity near the band edge. The laser damage thresholds for the semi-insulating epitaxial GaN:Mn layer and the n-type substrate layer were measured to be 2.4 and 4.2 J/cm², respectively. These are 6–10 times higher than that of BSO (0.4 J/cm²). These measurements were performed by exposing ~200 sites on the samples to increasing fluence levels from a Gaussian pulsed Nd:YAG laser system (1064 nm) operating at a 5 Hz repetition rate with a 3 ns pulse width. Photoresponsivity of the GaN:Mn material was investigated at discrete wavelengths of 447, 405, and 380 nm. Further, the peak photoresponsivity was observed under an illumination wavelength of 380 nm and is attributed to stronger absorption. The OALV was fabricated by attaching a 110-μm-thick GaN:Mn layer grown on a 280-μm-thick n-GaN layer to a 3-mm-thick BK7 optical window. A twisted nematic E7 liquid crystal was introduced to the 5 μm gap between the two components. Transmission levels of >90% were achieved for the fabricated OALVs for a peak voltage of 40 V, constrained by transmission “bleed-through”.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 2556944

Report Number(s):: LLNL--JRNL-870413; 1107385

Journal Information:: ACS Applied Engineering Materials, Journal Name: ACS Applied Engineering Materials Journal Issue: 2 Vol. 3; ISSN 2771-9545

Publisher:: ACS PublicationsCopyright Statement

Country of Publication:: United States

Language:: English

References (36)

Effect of a chiral dopant on the electro‐optical properties of polymer‐dispersed liquid‐crystal films Li, Wenbo; Zhang, Hongxue; Wang, Liping Journal of Applied Polymer Science, Vol. 105, Issue 4 https://doi.org/10.1002/app.26201	journal	April 2007
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Kresse, G.; Furthmüller, J. Computational Materials Science, Vol. 6, Issue 1, p. 15-50 https://doi.org/10.1016/0927-0256(96)00008-0	journal	July 1996
Mn-related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy Korotkov, R. Y.; Gregie, J. M.; Wessels, B. W. Physica B: Condensed Matter, Vol. 308-310 https://doi.org/10.1016/S0921-4526(01)00660-3	journal	December 2001
Transition-Metal-Related Quantum Emitters in Wurtzite AlN and GaN Czelej, Kamil; Lambert, M. Rey; Turiansky, Mark E. ACS Nano, Vol. 18, Issue 42 https://doi.org/10.1021/acsnano.4c07184	journal	October 2024
Advanced liquid crystal devices for augmented reality and virtual reality displays: principles and applications Yin, Kun; Hsiang, En-Lin; Zou, Junyu Light: Science & Applications, Vol. 11, Issue 1 https://doi.org/10.1038/s41377-022-00851-3	journal	May 2022
GaN intermediate band solar cells with Mn-doped absorption layer Lee, Ming-Lun; Huang, Feng-Wen; Chen, Po-Cheng Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-27005-z	journal	June 2018
Hybrid functionals based on a screened Coulomb potential Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias The Journal of Chemical Physics, Vol. 118, Issue 18 https://doi.org/10.1063/1.1564060	journal	May 2003
Reversible Ultraviolet Imaging with Liquid Crystals Margerum, J. D.; Nimoy, J.; Wong, S. ‐Y. Applied Physics Letters, Vol. 17, Issue 2 https://doi.org/10.1063/1.1653306	journal	July 1970
ac liquid-crystal light valve Beard, T. D.; Bleha, W. P.; Wong, S. -Y Applied Physics Letters, Vol. 22, Issue 3 https://doi.org/10.1063/1.1654574	journal	February 1973
Optical investigation of electronic states of Mn4+ ions in p-type GaN Han, B.; Wessels, B. W.; Ulmer, M. P. Applied Physics Letters, Vol. 86, Issue 4 https://doi.org/10.1063/1.1853525	journal	January 2005
Tutorial: Defects in semiconductors—Combining experiment and theory Alkauskas, Audrius; McCluskey, Matthew D.; Van de Walle, Chris G. Journal of Applied Physics, Vol. 119, Issue 18 https://doi.org/10.1063/1.4948245	journal	May 2016
Temperature-dependent band gap characteristics of Bi12SiO20 single crystals Isik, M.; Delice, S.; Gasanly, N. M. Journal of Applied Physics, Vol. 126, Issue 24 https://doi.org/10.1063/1.5129019	journal	December 2019
Fast photoconductor coupled liquid-crystal light valve Samuelson, L.; Wieder, H.; Guarnieri, C. R. Applied Physics Letters, Vol. 34, Issue 7 https://doi.org/10.1063/1.90830	journal	April 1979
Liquid crystal light valves as optically addressed liquid crystal spatial light modulators: optical wave mixing and sensing applications Residori, S.; Bortolozzo, U.; Huignard, J. P. Liquid Crystals Reviews, Vol. 6, Issue 1 https://doi.org/10.1080/21680396.2018.1496041	journal	January 2018
Growth, Mechanical and Thermal Properties of Bi ₄ Si ₃ O ₁₂ Single Crystals Shen, Hui; Xu, Jia-Yue; Ping, Wei-Jie Chinese Physics Letters, Vol. 29, Issue 7 https://doi.org/10.1088/0256-307X/29/7/076501	journal	July 2012
Finite-size corrections for defect-involving vertical transitions in supercell calculations Gake, Tomoya; Kumagai, Yu; Freysoldt, Christoph Physical Review B, Vol. 101, Issue 2 https://doi.org/10.1103/PhysRevB.101.020102	journal	January 2020
Finite-size corrections to defect energetics along one-dimensional configuration coordinate Kumagai, Yu Physical Review B, Vol. 107, Issue 22 https://doi.org/10.1103/PhysRevB.107.L220101	journal	June 2023
Projector augmented-wave method Blöchl, P. E. Physical Review B, Vol. 50, Issue 24, p. 17953-17979 https://doi.org/10.1103/PhysRevB.50.17953	journal	December 1994
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Transition metal defects in group-III nitrides: An ab initio calculation of hyperfine interactions and optical transitions Gerstmann, U.; Blumenau, A. T.; Overhof, H. Physical Review B, Vol. 63, Issue 7 https://doi.org/10.1103/PhysRevB.63.075204	journal	January 2001
Thermal conductivity of GaN, GaN 71 , and SiC from 150 K to 850 K Zheng, Qiye; Li, Chunhua; Rai, Akash Physical Review Materials, Vol. 3, Issue 1 https://doi.org/10.1103/PhysRevMaterials.3.014601	journal	January 2019
First-principles calculations for point defects in solids Freysoldt, Christoph; Grabowski, Blazej; Hickel, Tilmann Reviews of Modern Physics, Vol. 86, Issue 1 https://doi.org/10.1103/RevModPhys.86.253	journal	March 2014
Fundamental mechanisms of laser-induced damage in optical materials: today’s state of understanding and problems Manenkov, Alexander A. Optical Engineering, Vol. 53, Issue 1 https://doi.org/10.1117/1.OE.53.1.010901	journal	January 2014
Refractive indices of liquid crystal E7 depending on temperature and wavelengths Ma, Mingjian; Li, Shuguang; Jing, Xili Optical Engineering, Vol. 56, Issue 11 https://doi.org/10.1117/1.OE.56.11.117109	journal	November 2017
A light-driven light valve for metal additive manufacturing Elhadj, Selim; Davidson, Zoey; Sargol, Yasaman Smart Materials for Opto-Electronic Applications https://doi.org/10.1117/12.2665533	conference	June 2023
A programmable beam shaping system for tailoring the profile of high fluence laser beams Heebner, John; Borden, Michael; Miller, Phil Laser Damage Symposium XLII: Annual Symposium on Optical Materials for High Power Lasers, SPIE Proceedings https://doi.org/10.1117/12.867728	conference	November 2010
Femtosecond laser-induced damage threshold of nematic liquid crystals at 1030 nm Ramousse, Loic; Chériaux, Gilles; Claudet, Cyrille Applied Optics, Vol. 60, Issue 26 https://doi.org/10.1364/AO.436236	journal	September 2021
Transmissive liquid crystal light-valve for near-infrared applications Bortolozzo, Umberto; Residori, Stefania; Huignard, Jean-Pierre Applied Optics, Vol. 52, Issue 22 https://doi.org/10.1364/AO.52.000E73	journal	July 2013
Measurement of helical twisting power based on axially symmetrical photo-aligned dye-doped liquid crystal film Ko, Shih-Wei; Huang, Shu-Hao; Fuh, Andy Y. -G. Optics Express, Vol. 17, Issue 18 https://doi.org/10.1364/OE.17.015926	journal	January 2009
All-optical measurement of elastic constants in nematic liquid crystals Klus, Bartłomiej; Laudyn, Urszula A.; Karpierz, Mirosław A. Optics Express, Vol. 22, Issue 24 https://doi.org/10.1364/OE.22.030257	journal	January 2014
Diode-based additive manufacturing of metals using an optically-addressable light valve Matthews, Manyalibo J.; Guss, Gabe; Drachenberg, Derrek R. Optics Express, Vol. 25, Issue 10 https://doi.org/10.1364/OE.25.011788	journal	January 2017
Polarization-independent nematic liquid crystal phase modulator based on optical compensation with sub-millisecond response Yan, Kexin; Guo, Qi; Wu, Fan Optics Express, Vol. 27, Issue 7 https://doi.org/10.1364/OE.27.009925	journal	March 2019
High laser damage threshold liquid crystal optical switch based on a gallium nitride transparent electrode Xing, Zhibo; Fan, Wei; Huang, Dajie Optics Letters, Vol. 45, Issue 13 https://doi.org/10.1364/OL.390440	journal	June 2020
Optical and electrical properties of indium tin oxide films near their laser damage threshold Yoo, Jae-Hyuck; Lange, Andrew; Bude, Jeff Optical Materials Express, Vol. 7, Issue 3 https://doi.org/10.1364/OME.7.000817	journal	January 2017
A review of liquid crystal spatial light modulators: devices and applications Yang, Yiqian; Forbes, Andrew Opto-Electronic Science, Vol. 2, Issue 8 https://doi.org/10.29026/oes.2023.230026	journal	January 2023
Fast-Response Liquid Crystal for Spatial Light Modulator and LiDAR Applications Zou, Junyu; Yang, Qian; Hsiang, En-Lin Crystals, Vol. 11, Issue 2 https://doi.org/10.3390/cryst11020093	journal	January 2021

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Optically Addressable Light Valve Based on a GaN:Mn Photoconductor

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