The proximity effect and critical field behavior of Re/Al bilayers

Womack, F. N.; Ortega, Á. M.; Karna, S. K.; Graf, D.; Adams, P. W.

doi:10.1088/2053-1591/adbab6

The proximity effect and critical field behavior of Re/Al bilayers

Journal Article · Fri Apr 11 00:00:00 EDT 2025 · Materials Research Express (Online)

DOI:https://doi.org/10.1088/2053-1591/adbab6· OSTI ID:2555855

; ; Karna, S. K.; Graf, D.;

Abstract

We report the perpendicular critical field H _{c 2} properties of disordered Re-Al bilayers via magneto-transport measurements. The bilayers consisted of a $d_{Re} = 3$ nm bottom layer of Re and an upper Al layer with thickness varying between d _Al = 0 − 3 nm. We find that in this range of Al thicknesses, the bilayer transition temperature T _c increases with increasing Al thickness, although their monolayer counterparts have $T_{c}^{Re} > T_{c}^{Al}$ . Furthermore, H _{c 2} of the bilayers has a local maximum at an Al coverage of 1.5 nm with a critical field that is 50% larger than that of the standalone 3 nm Re film. At higher Al thicknesses H _{c 2} drops rapidly but remains more than an order of magnitude greater that that of comparable thickness standalone Al film. Our data show that a thin, disordered Re under-layer can dramatically increase the magnetic field tolerance of the Al over-layer. This would allow one to retain the desirable chemical and metallurgical properties of Al without sacrificing high field compatibility in quantum circuits, such as topological qubit devices and superinductor circuits.

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Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: FG02-07ER46420

OSTI ID:: 2555855

Alternate ID(s):: OSTI ID: 2524079

Journal Information:: Materials Research Express (Online), Journal Name: Materials Research Express (Online) Journal Issue: 4 Vol. 12; ISSN 2053-1591

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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