Green-emitting cubic GaN/In0.16Ga0.84N/GaN quantum well with 32% internal quantum efficiency at room temperature

Lee, J.; Bayram, C.

doi:10.1063/5.0179477

Green-emitting cubic GaN/In_0.16Ga_0.84N/GaN quantum well with 32% internal quantum efficiency at room temperature

Journal Article · Tue Jan 02 00:00:00 EST 2024 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0179477· OSTI ID:2555730

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University of Illinois at Urbana-Champaign, IL (United States)
University of Illinois at Urbana-Champaign, IL (United States); Innovative COmpound semiconductoR LABoratory (ICORLAB), Urbana, IL (United States)

Structural and optical properties of a green-emitting cubic (i.e., zinc blende) GaN/In_0.16Ga_0.84N/GaN single quantum well structure are reported. The active layer is grown on a phase-pure (i.e., 100%) cubic GaN enabled on a 1 × 1 cm² U-grooved silicon (100) through aspect ratio phase trapping. Energy dispersive x-ray spectroscopy combined with room temperature cathodoluminescence reveals 522 nm green light emission at room temperature with only 16.0% ± 1.6% of indium content, which is ~30% less than the amount of indium needed in a traditional green-emitting hexagonal (i.e., wurtzite) well. Temperature-dependent behavior of the green emission, such as activation energy, s-shaped peak energy shift, and linewidth, is reported. Cathodoluminescence at 8 and 300 K reveals an internal quantum efficiency of 32.0% ± 0.6%, which is higher than any reported value for cubic wells. Altogether, phase-pure cubic active layers on phase transition cubic GaN are shown to be promising for green and longer wavelength emitters.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States); University of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: Office of Naval Research (ONR); USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Contributing Organization:: Central Research Facilities; Frederick Seitz Materials Research Laboratory; Micro and Nanotechnology Laboratory; Oak Ridge National Laboratory (ORNL)

Grant/Contract Number:: AR0001558

OSTI ID:: 2555730

Alternate ID(s):: OSTI ID: 2557506

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 124; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Figures / Tables (3)

FIGURE 1(p. 10)

FIGURE 2(p. 11)

FIGURE 3(p. 12)

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Related Subjects

42 ENGINEERING
Arrhenius plot
Cathodoluminescence spectroscopy
Chemical vapor deposition
Crystal structure
Energy dispersive X-ray spectroscopy
Epitaxy
Luminescence
Phase transitions
Quantum efficiency
Quantum wells