Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs

Li, Xuefeng; Pant, Nick; Rahman, Sheikh Ifatur; Armitage, Rob; Rajan, Siddharth; Kioupakis, Emmanouil; Feezell, Daniel

doi:10.1063/5.0258108

Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs

Journal Article · Mon Mar 31 00:00:00 EDT 2025 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0258108· OSTI ID:2551797

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University of New Mexico, Albuquerque, NM (United States); University of New Mexico
University of Michigan, Ann Arbor, MI (United States)
The Ohio State University, Columbus, OH (United States)
Lumileds LLC, San Jose, CA (United States)
University of New Mexico, Albuquerque, NM (United States)

We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence technique. Multiple mechanisms related to efficiency loss are independently examined, including injection efficiency, carrier density vs current density relationship, phase space filling, quantum-confined Stark effect, and Coulomb enhancement. An optimal QW thickness of around 2.7 nm in these InGaN/GaN LEDs was determined for QWs having constant In composition. Despite improved control of deep-level defects and lower carrier density at a given current density, LEDs with thin QWs still suffer from an imbalance in enhancement effects on the radiative and intrinsic Auger–Meitner recombination coefficients. The imbalance in enhancement effects results in a decline in internal quantum efficiency and radiative efficiency with decreasing QW thickness at low current density in LEDs with QW thicknesses below 2.7 nm. Here, we also investigate how LED modulation bandwidth varies with QW thickness, identifying the key trends and their implications for device performance.

View Accepted Manuscript (DOE)

Research Organization:: University of New Mexico, Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office

Grant/Contract Number:: EE0009163

OSTI ID:: 2551797

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 126; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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