Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Comparison of the spatial statistics of random and defined-sequence photoresist films

Journal Article · · Journal of Micro/Nanopatterning, Materials, and Metrology
 [1];  [2]
  1. Columbia Hill Technical Consulting, Fremont, CA (United States)
  2. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

The resolution-line edge roughness-sensitivity tradeoff has motivated the exploration of potential improvements using defined sequence polymers and polymer-bound photoacid generators and quenchers. We characterize the internal structures of positive tone photoresist polymer films formed from defined sequence polymers and compare them with random copolymers of the same composition. We model their imaging to connect initially to developable film structures. We use a polymer packing algorithm to simulate films of diverse compositions and locations of photoacid generators and quenchers, using the composition of an ESCAP photoresist. We use a simple extreme ultraviolet exposure-deprotection algorithm to model developable image formation within them. In all cases, the spatial distribution of chemical moieties in the film for defined sequence polymers is nearly indistinguishable from random copolymers. We evaluate several exposure-deprotection scenarios and find that a defined sequence copolymer has a distinctive developable image under certain circumstances. The use of defined sequence polymers within a photoresist layer does not automatically result in improved imaging; however, they do have some characteristics different from random polymers of the same composition. Further study of these characteristics may provide a route to improved control over the nanoscale imaging process.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
2551791
Journal Information:
Journal of Micro/Nanopatterning, Materials, and Metrology, Journal Name: Journal of Micro/Nanopatterning, Materials, and Metrology Journal Issue: 04 Vol. 23; ISSN 2708-8340
Publisher:
SPIECopyright Statement
Country of Publication:
United States
Language:
English

References (23)

Polypeptoids: Exploring the Power of Sequence Control in a Photoresist for Extreme‐Ultraviolet Lithography journal October 2023
Synthesis of well‐defined photoresist materials by SET‐LRP journal April 2010
Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulations journal September 2004
Hierarchical Nanomaterials Assembled from Peptoids and Other Sequence-Defined Synthetic Polymers journal August 2021
Terpolymerization of Styrenic Photoresist Polymers: Effect of RAFT Polymerization on the Compositional Heterogeneity journal May 2015
Lithographic Imaging Techniques for the Formation of Nanoscopic Features journal July 1999
The Mechanism of Phenolic Polymer Dissolution:  A New Perspective journal August 1997
Sequence-definition from controlled polymerization: the next generation of materials journal January 2018
Novel polymeric anionic photoacid generators (PAGs) and corresponding polymers for 193 nm lithography journal January 2006
Novel anionic photoacid generators (PAGs) and corresponding PAG bound polymers for sub-50 nm EUV lithography journal January 2007
Statistical limitations of printing 50 and 80 nm contact holes by EUV lithography
  • Gallatin, G. M.; Houle, F. A.; Cobb, J. L.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, Vol. 21, Issue 6 https://doi.org/10.1116/1.1629294
journal November 2003
Simulation of roughness in chemically amplified resists using percolation theory
  • Patsis, G. P.; Glezos, N.; Raptis, I.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, Vol. 17, Issue 6 https://doi.org/10.1116/1.591012
journal November 1999
Contribution of EUV resist counting statistics to stochastic printing failures journal March 2021
XAS photoresists electron/quantum yields study with synchrotron light conference March 2015
Narrow polydispersity polymers for microlithography: synthesis and properties conference June 1996
Understanding molecular-level effects during post-exposure processing conference August 2001
Resist blur and line edge roughness conference May 2005
Radiation Chemistry in Chemically Amplified Resists journal March 2010
Study on Resist Performance of Polymer-Bound and Polymer-Blended Photo-Acid Generators journal July 2012
CA Resist with Side Chain PAG Group for EUV Resist journal January 2006
Controlled Sequence Photoresists from Polypeptoids journal December 2022
Environmentally stable chemical amplification positive resist: principle, chemistry, contamination resistance, and lithographic feasibility. journal January 1994
High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results journal August 2020

Similar Records

Chemically Amplified, Dry-Develop Poly(aldehyde) Photoresist
Journal Article · Wed May 15 00:00:00 EDT 2024 · ECS Journal of Solid State Science and Technology · OSTI ID:2350874