High Aspect Ratio Al-Rich AlGaN Etching Technology for FinFET Fabrication

Conference · Wed Nov 01 04:00:00 EDT 2023

OSTI ID:2540529

Klein, Brianna Alexandra ^[1]; Pal, Hridibrata ^[2]; Xie, Qingyun ^[2]; Niroula, John ^[2]; Shih, Pao-Chuan ^[2]; Allerman, Andrew A. ^[1]; Armstrong, Andrew Michael ^[1]; Palacios, Thomas ^[2]

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1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
2. Massachusetts Institute of Technology

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: Army Research Office; Army Research Laboratory
• DOE Contract Number: NA0003525
• OSTI ID: 2540529
• Report Number(s): SAND2024-02585C
• Country of Publication: United States
• Language: English