Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Using ground state and excited state DFTto decipher 3d dopant defects in GaN

Conference ·
OSTI ID:2540367
 [1];  [1]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
Other (DOE)
DOE Contract Number:
NA0003525
OSTI ID:
2540367
Report Number(s):
SAND2024-03186C
Country of Publication:
United States
Language:
English

Similar Records

Using ground state and excited state density functional theory to decipher 3d dopant defects in GaN
Journal Article · Sun Oct 13 20:00:00 EDT 2024 · Journal of Physics. Condensed Matter · OSTI ID:2466295

Influence of dopants on defect formation in GaN
Conference · Mon Oct 15 00:00:00 EDT 2001 · OSTI ID:789183

Related Subjects