Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

High-Current (390 A) Large Area Vertical GaN PN Diodes with 1600 V Breakdown

Conference ·
DOI:https://doi.org/10.2172/2540265· OSTI ID:2540265
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
Advanced Research Projects Agency - Energy
DOE Contract Number:
NA0003525
OSTI ID:
2540265
Report Number(s):
SAND2024-03202C
Country of Publication:
United States
Language:
English

Similar Records

High-Current (390 A) Large Area Vertical GaN PN Diodes with 1600 V Breakdown
Conference · Thu Feb 29 23:00:00 EST 2024 · OSTI ID:2540489

Development of High-Voltage Vertical GaN PN Diodes (invited).
Conference · Mon Nov 30 23:00:00 EST 2020 · OSTI ID:1835967

Development of High-Voltage Vertical GaN PN Diodes (invited).
Conference · Mon Nov 30 23:00:00 EST 2020 · OSTI ID:1835968

Related Subjects