Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation

Daeumer, Matthias; Yoo, Jae-Hyuck; Xu, Zhiyu; Cho, Minkyu; Bakhtiary-Noodeh, Marzieh; Detchprohm, Theeradetch; Zhang, Yuxuan; Thirupakuzi Vangipuram, Vijay Gopal; Talesara, Vishank; Xu, Yibo; Letts, Edward; Key, Daryl; Li, Tian T.; Shao, Qinghui; Dupuis, Russell; Shen, Shyh-Chiang; Lu, Wu; Zhao, Hongping; Hashimoto, Tadao; Laurence, Ted A.

doi:10.1038/s41598-024-83398-0

Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation

Journal Article · Thu Jan 02 00:00:00 EST 2025 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-024-83398-0· OSTI ID:2530271

Daeumer, Matthias ^[1]; Yoo, Jae-Hyuck ^[1]; Xu, Zhiyu ^[2]; Cho, Minkyu ^[2]; Bakhtiary-Noodeh, Marzieh ^[2]; Detchprohm, Theeradetch ^[2]; Zhang, Yuxuan ^[3]; Thirupakuzi Vangipuram, Vijay Gopal ^[3]; Talesara, Vishank ^[3]; Xu, Yibo ^[3]; Letts, Edward ^[4]; Key, Daryl ^[4]; Li, Tian T. ^[1]; Shao, Qinghui ^[1]; Dupuis, Russell ^[2]; Shen, Shyh-Chiang ^[2]; Lu, Wu ^[3]; Zhao, Hongping ^[3]; Hashimoto, Tadao ^[4]; Laurence, Ted A. ^[1]

Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Georgia Institute of Technology, Atlanta, GA (United States)
The Ohio State Univ., Columbus, OH (United States)
SixPoint Materials, Inc., Buellton, CA (United States)

GaN is rapidly gaining attention for implementation in power electronics but is still impacted by its high density of threading dislocations (TDs), which have been shown to facilitate current leakage through devices limiting their performance and reliability. Here, we discuss a novel implementation of photoluminescence (PL) imaging to study TDs in regions within vertically structured p-i-n GaN (PIN) diodes consisting of metalorganic chemical vapor deposition (MOCVD) epitaxial layers grown on ammonothermal GaN (am-GaN) substrates. PL imaging with a sub-bandgap excitation energy (3.1 eV) reveals TDs with excellent clarity in three dimensions within the am-GaN substrate. Galvanometric-driven PL imaging allows the microstructure of hundreds of devices to be characterized in a single session, enhancing the screening process through the addition of device specific TD location tracking and density mapping. The visibility, structural characteristics, luminescent nature and evolution of TDs through the GaN growth process are described, potentially providing the ability to define TD structures associated with leakage current.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Advanced Materials & Manufacturing Technologies Office (AMMTO)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 2530271

Report Number(s):: LLNL--JRNL-866160; 1100516

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 15; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

References (51)

First-principles theory of acceptors in nitride semiconductors: First-principles theory of acceptors in nitride semiconductors Lyons, John L.; Alkauskas, Audrius; Janotti, Anderson physica status solidi (b), Vol. 252, Issue 5 https://doi.org/10.1002/pssb.201552062	journal	April 2015
Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer Inotsume, Sho; Kokubo, Nobuhiko; Yamada, Hisashi physica status solidi (b), Vol. 257, Issue 4 https://doi.org/10.1002/pssb.201900527	journal	February 2020
Si diffusion in epitaxial GaN Jakiela, Rafal; Barcz, Adam; Dumiszewska, Ewa physica status solidi c, Vol. 3, Issue 6 https://doi.org/10.1002/pssc.200565112	journal	June 2006
X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices Liu, Yafei; Peng, Hongyu; Ailihumaer, Tuerxun Journal of Electronic Materials, Vol. 50, Issue 6 https://doi.org/10.1007/s11664-021-08762-6	journal	February 2021
Theoretical aspects of the minority carrier recombination at dislocations in semiconductors Farvacque, Jean-Louis Materials Science and Engineering: B, Vol. 42, Issue 1-3 https://doi.org/10.1016/S0921-5107(96)01691-1	journal	December 1996
Characterization of threading dislocations in GaN (0001) substrates by photoluminescence imaging, cathodoluminescence mapping and etch pits Yao, Yongzhao; Ishikawa, Yukari; Sudo, Masaki Journal of Crystal Growth, Vol. 468 https://doi.org/10.1016/j.jcrysgro.2017.01.017	journal	June 2017
Identifying threading dislocation types in ammonothermally grown bulkα-GaN by confocal Raman 3-D imaging of volumetric stress distribution Holmi, J. T.; Bairamov, B. H.; Suihkonen, S. Journal of Crystal Growth, Vol. 499 https://doi.org/10.1016/j.jcrysgro.2018.07.024	journal	October 2018
Long range, non-destructive characterization of GaN substrates for power devices Gallagher, J. C.; Anderson, T. J.; Luna, L. E. Journal of Crystal Growth, Vol. 506 https://doi.org/10.1016/j.jcrysgro.2018.10.032	journal	January 2019
Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives Zajac, M.; Kucharski, R.; Grabianska, K. Progress in Crystal Growth and Characterization of Materials, Vol. 64, Issue 3 https://doi.org/10.1016/j.pcrysgrow.2018.05.001	journal	September 2018
Manifestation of edge dislocations in photoluminescence of GaN Reshchikov, M. A.; Huang, D.; He, L. Physica B: Condensed Matter, Vol. 367, Issue 1-4 https://doi.org/10.1016/j.physb.2005.05.044	journal	October 2005
Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC Luo, Hao; Li, Jiajun; Yang, Guang ACS Applied Electronic Materials, Vol. 4, Issue 4 https://doi.org/10.1021/acsaelm.1c01330	journal	April 2022
Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress Narita, Tetsuo; Kanechika, Masakazu; Kojima, Jun Scientific Reports, Vol. 12, Issue 1 https://doi.org/10.1038/s41598-022-05416-3	journal	January 2022
Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates Hamachi, Takeaki; Tohei, Tetsuya; Hayashi, Yusuke Scientific Reports, Vol. 13, Issue 1 https://doi.org/10.1038/s41598-023-29458-3	journal	February 2023
Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy Yao, Yongzhao; Sugawara, Yoshihiro; Yokoe, Daisaku CrystEngComm, Vol. 22, Issue 48 https://doi.org/10.1039/D0CE01344G	journal	January 2020
Electrical characterization of GaN p-n junctions with and without threading dislocations Kozodoy, P.; Ibbetson, J. P.; Marchand, H. Applied Physics Letters, Vol. 73, Issue 7 https://doi.org/10.1063/1.122057	journal	August 1998
Oxygen diffusion into SiO2-capped GaN during annealing Pearton, S. J.; Cho, H.; LaRoche, J. R. Applied Physics Letters, Vol. 75, Issue 19 https://doi.org/10.1063/1.125194	journal	November 1999
Characterization of threading dislocations in GaN epitaxial layers Hino, T.; Tomiya, S.; Miyajima, T. Applied Physics Letters, Vol. 76, Issue 23 https://doi.org/10.1063/1.126666	journal	June 2000
Influence of different types of threading dislocations on the carrier mobility and photoluminescence in epitaxial GaN Shi, J. Y.; Yu, L. P.; Wang, Y. Z. Applied Physics Letters, Vol. 80, Issue 13 https://doi.org/10.1063/1.1465531	journal	April 2002
Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates Hsu, J. W. P.; Manfra, M. J.; Molnar, R. J. Applied Physics Letters, Vol. 81, Issue 1 https://doi.org/10.1063/1.1490147	journal	July 2002
Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride Simpkins, B. S.; Yu, E. T.; Waltereit, P. Journal of Applied Physics, Vol. 94, Issue 3 https://doi.org/10.1063/1.1586952	journal	August 2003
Unusual luminescence lines in GaN Reshchikov, M. A.; Huang, D.; Yun, F. Journal of Applied Physics, Vol. 94, Issue 9 https://doi.org/10.1063/1.1609632	journal	November 2003
Experimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodes Huang, Y.; Chen, X. D.; Fung, S. Journal of Applied Physics, Vol. 94, Issue 9 https://doi.org/10.1063/1.1615705	journal	November 2003
Luminescence properties of defects in GaN Reshchikov, Michael A.; Morkoç, Hadis Journal of Applied Physics, Vol. 97, Issue 6 https://doi.org/10.1063/1.1868059	journal	March 2005
Origin of forward leakage current in GaN-based light-emitting devices Lee, S. W.; Oh, D. C.; Goto, H. Applied Physics Letters, Vol. 89, Issue 13 https://doi.org/10.1063/1.2357930	journal	September 2006
Nonradiative recombination at threading dislocations in n-type GaN: Studied by cathodoluminescence and defect selective etching Albrecht, M.; Weyher, J. L.; Lucznik, B. Applied Physics Letters, Vol. 92, Issue 23 https://doi.org/10.1063/1.2928226	journal	June 2008
Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping Feng, Gan; Suda, Jun; Kimoto, Tsunenobu Journal of Applied Physics, Vol. 110, Issue 3 https://doi.org/10.1063/1.3622336	journal	August 2011
Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN Sintonen, Sakari; Rudziński, Mariusz; Suihkonen, Sami Journal of Applied Physics, Vol. 116, Issue 8 https://doi.org/10.1063/1.4893901	journal	August 2014
Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes Sang, Liwen; Ren, Bing; Sumiya, Masatomo Applied Physics Letters, Vol. 111, Issue 12 https://doi.org/10.1063/1.4994627	journal	September 2017
Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy Hamachi, T.; Takeuchi, S.; Tohei, T. Journal of Applied Physics, Vol. 123, Issue 16 https://doi.org/10.1063/1.5011345	journal	March 2018
Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate Usami, Shigeyoshi; Ando, Yuto; Tanaka, Atsushi Applied Physics Letters, Vol. 112, Issue 18 https://doi.org/10.1063/1.5024704	journal	April 2018
Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC Tanuma, R.; Kamata, I.; Hadorn, J. P. Journal of Applied Physics, Vol. 124, Issue 12 https://doi.org/10.1063/1.5043238	journal	September 2018
Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current Usami, Shigeyoshi; Mayama, Norihito; Toda, Kazuya Applied Physics Letters, Vol. 114, Issue 23 https://doi.org/10.1063/1.5097767	journal	June 2019
Do all screw dislocations cause leakage in GaN-based devices? Wang, Jin; You, Haifan; Guo, Hui Applied Physics Letters, Vol. 116, Issue 6 https://doi.org/10.1063/1.5135960	journal	February 2020
The effect of annealing on photoluminescence from defects in ammonothermal GaN Reshchikov, M. A.; Demchenko, D. O.; Ye, D. Journal of Applied Physics, Vol. 131, Issue 3 https://doi.org/10.1063/5.0077796	journal	January 2022
Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping Xu, Zhiyu; Daeumer, Matthias A.; Cho, Minkyu Journal of Applied Physics, Vol. 135, Issue 20 https://doi.org/10.1063/5.0208578	journal	May 2024
Formation of helical dislocations in ammonothermal GaN substrate by heat treatment Horibuchi, Kayo; Yamaguchi, Satoshi; Kimoto, Yasuji Semiconductor Science and Technology, Vol. 31, Issue 3 https://doi.org/10.1088/0268-1242/31/3/034002	journal	January 2016
Trainable Weka Segmentation: a machine learning tool for microscopy pixel classification Arganda-Carreras, Ignacio; Kaynig, Verena; Rueden, Curtis Bioinformatics, Vol. 33, Issue 15 https://doi.org/10.1093/bioinformatics/btx180	journal	March 2017
Carrier Diffusion in GaN : A Cathodoluminescence Study. III. Nature of Nonradiative Recombination at Threading Dislocations Lähnemann, Jonas; Kaganer, Vladimir M.; Sabelfeld, Karl K. Physical Review Applied, Vol. 17, Issue 2 https://doi.org/10.1103/PhysRevApplied.17.024019	journal	February 2022
Deep acceptors trapped at threading-edge dislocations in GaN Elsner, J.; Jones, R.; Heggie, M. I. Physical Review B, Vol. 58, Issue 19 https://doi.org/10.1103/PhysRevB.58.12571	journal	November 1998
Theory of Threading Edge and Screw Dislocations in GaN Elsner, J.; Jones, R.; Sitch, P. K. Physical Review Letters, Vol. 79, Issue 19 https://doi.org/10.1103/PhysRevLett.79.3672	journal	November 1997
Strain Induced Deep Electronic States around Threading Dislocations in GaN Lymperakis, L.; Neugebauer, J.; Albrecht, M. Physical Review Letters, Vol. 93, Issue 19 https://doi.org/10.1103/PhysRevLett.93.196401	journal	November 2004
Effect of Surface Morphology on Diode Performance in Vertical GaN Schottky Diodes Hite, J. K.; Anderson, T. J.; Mastro, M. A. ECS Journal of Solid State Science and Technology, Vol. 6, Issue 11 https://doi.org/10.1149/2.0221711jss	journal	January 2017
Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy Stahlbush, Robert E.; Liu, Kendrick X.; Zhang, Q. Materials Science Forum, Vol. 556-557 https://doi.org/10.4028/www.scientific.net/MSF.556-557.295	journal	September 2007
Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method Hashimoto, Tadao; Letts, Edward R.; Key, Daryl Japanese Journal of Applied Physics, Vol. 58, Issue SC https://doi.org/10.7567/1347-4065/ab06b3	journal	April 2019
Evaluation of dislocations under the electrodes of GaN pn diodes by X-ray topography Kanechika, Masakazu; Yamaguchi, Satoshi; Imanishi, Masayuki Japanese Journal of Applied Physics, Vol. 58, Issue SC https://doi.org/10.7567/1347-4065/ab0f19	journal	May 2019
Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates Usami, Shigeyoshi; Tanaka, Atsushi; Fukushima, Hayata Japanese Journal of Applied Physics, Vol. 58, Issue SC https://doi.org/10.7567/1347-4065/ab1250	journal	May 2019
Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion Chen, Jun; Yi, Wei; Kimura, Takashi Applied Physics Express, Vol. 12, Issue 5 https://doi.org/10.7567/1882-0786/ab14cb	journal	April 2019
Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence Tanikawa, Tomoyuki; Ohnishi, Kazuki; Kanoh, Masaya Applied Physics Express, Vol. 11, Issue 3 https://doi.org/10.7567/APEX.11.031004	journal	February 2018
Detection of edge component of threading dislocations in GaN by Raman spectroscopy Kokubo, Nobuhiko; Tsunooka, Yosuke; Fujie, Fumihiro Applied Physics Express, Vol. 11, Issue 6 https://doi.org/10.7567/APEX.11.061002	journal	May 2018
Large-area analysis of dislocations in ammonothermal GaN by synchrotron radiation X-ray topography Sintonen, Sakari; Suihkonen, Sami; Jussila, Henri Applied Physics Express, Vol. 7, Issue 9 https://doi.org/10.7567/APEX.7.091003	journal	August 2014
Plan-View and Cross-Sectional Photoluminescence Imaging Analyses of Threading Dislocations in 4H-SiC Epilayers Nagano, Masahiro; Kamata, Isaho; Tsuchida, Hidekazu Japanese Journal of Applied Physics, Vol. 52, Issue 4S https://doi.org/10.7567/JJAP.52.04CP09	journal	April 2013

Similar Records

Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

Journal Article · Sun May 01 00:00:00 EDT 2016 · Japanese Journal of Applied Physics · OSTI ID:1254106

Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

Journal Article · Sun Dec 27 23:00:00 EST 2015 · Journal of Applied Physics · OSTI ID:22493107

Microstructure and physical properties of GaN films on sapphire substrates

Conference · Sat Jul 01 00:00:00 EDT 2000 · OSTI ID:20104552

Related Subjects

36 MATERIALS SCIENCE
43 PARTICLE ACCELERATORS

Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation

Citation Formats

References (51)

Similar Records

Related Subjects