Higher Vortexability: Zero-Field Realization of Higher Landau Levels
Journal Article
·
· Physical Review Letters
- Harvard University, Cambridge, MA (United States); University of Tokyo (Japan); Harvard University
- University of California, Berkeley, CA (United States); University of California at San Diego, La Jolla, CA (United States)
- Harvard University, Cambridge, MA (United States)
The rise of moiré materials has led to experimental realizations of integer and FCIs in small or vanishing magnetic fields. At the same time, a set of minimal conditions sufficient to guarantee an Abelian fractional state in a flat band were identified, namely “ideal" or “vortexable" quantum geometry. Such vortexable bands share essential features with the LLL, while excluding the need for more fine-tuned aspects such as flat Berry curvature. A natural and important generalization is to ask if such conditions can be extended to capture the quantum geometry of higher Landau levels, particularly the first (1LL), where non-Abelian states at ν = 1/2, 2/5 are known to be competitive. The possibility of realizing these states at zero magnetic field, and perhaps even more exotic ones, could become a reality if we could identify the essential structure of the 1LL in Chern bands. In this work, we introduce a precise definition of 1LL quantum geometry, along with a figure of merit that measures how closely a given band approaches the 1LL. Furthermore, periodically strained Bernal graphene is shown to realize such a 1LL structure even in zero magnetic field.
- Research Organization:
- Harvard University, Cambridge, MA (United States)
- Sponsoring Organization:
- JSPS KAKENHI; USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC02-07CH11358
- OSTI ID:
- 2529464
- Alternate ID(s):
- OSTI ID: 2533590
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 10 Vol. 134; ISSN 0031-9007
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Fractional Chern insulators in magic-angle twisted bilayer graphene
Symmetry-Based Classification of Exact Flat Bands in Single and Bilayer Moiré Systems
Chiral limit and origin of topological flat bands in twisted transition metal dichalcogenide homobilayers
Journal Article
·
Tue Dec 14 19:00:00 EST 2021
· Nature (London)
·
OSTI ID:1904548
Symmetry-Based Classification of Exact Flat Bands in Single and Bilayer Moiré Systems
Journal Article
·
Mon Jun 30 20:00:00 EDT 2025
· Physical Review Letters
·
OSTI ID:2572553
Chiral limit and origin of topological flat bands in twisted transition metal dichalcogenide homobilayers
Journal Article
·
Mon May 06 20:00:00 EDT 2024
· Communications Physics
·
OSTI ID:2578177