The effect of gas-phase additives C{sub 2}H{sub 4}, C{sub 2}H{sub 6}, and C{sub 2}H{sub 2} on SiH{sub 4}/O{sub 2} chemical vapor deposition
- Univ. of Tokyo (Japan)
The effects of adding C{sub 2}H{sub 6} and C{sub 2}H{sub 2} on the chemical vapor deposition of SiO{sub 2} from SiH{sub 4}/O{sub 2} were studied using a hot-wall tubular reactor operated at a temperature of 873 K. Without additives, rough films with poor step coverage were obtained. Adding C{sub 2}H{sub 6} resulted in clear films with good step coverage. However, adding C{sub 2}H{sub 2} did not improve the quality of the film or the step coverage. Numerical simulations of the gas-phase elementary reaction kinetics of the SiH{sub 4}/O{sub 2} reaction system were made for the same conditions as the experiments. The simulations show rapid conversion (i.e., within 0.006 s) of SiH{sub 4} into SiO{sub 2}, resulting in high concentrations of SiO{sub 2}, which might form clusters that deposit to form rough films. Numerical simulations, including C{sub 2}H{sub 6}, C{sub 2}H{sub 4}, and C{sub 2}H{sub 2}, showed that C{sub 2}H{sub 6} and C{sub 2}H{sub 4} reduced the gas-phase SiH{sub 4} reaction rate and that C{sub 2}H{sub 2} did not affect it. These numerical results agree with experimental results and show that simulations of gas-phase, elementary chemical reactions are sufficiently accurate to reproduce the behavior of some aspects of CVD processes.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 251063
- Journal Information:
- Journal of the Electrochemical Society, Vol. 143, Issue 4; Other Information: PBD: Apr 1996
- Country of Publication:
- United States
- Language:
- English
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