Multiferroic materials host both ferroelectricity and magnetism, offering potential for magnetic memory and spin transistor applications. Here, we report a multiferroic chalcogenide semiconductor Cu1-xMn1+ySiTe3 (0.04 ≤ x ≤ 0.26; 0.03 ≤ y ≤ 0.15), which crystallizes in a polar monoclinic structure (Pm space group). It exhibits a canted antiferromagnetic state below 35 kelvin, with magnetic hysteresis and remanent magnetization under 15 kelvin. We demonstrate multiferroicity and strong magnetoelectric coupling through magnetodielectric and magnetocurrent measurements. At 10 kelvin, the magnetically induced electric polarization reaches ~0.8 microcoulombs per square centimeter, comparable to the highest value in oxide multiferroics. We also observe possible room-temperature ferroelectricity. Given that multiferroicity is very rare among transition metal chalcogenides, our finding sets up a unique materials platform for designing multiferroic chalcogenides.
De, Chandan, et al. "Discovery of a layered multiferroic compound Cu<sub>1-x</sub>Mn<sub>1+y</sub>SiTe<sub>3</sub> with strong magnetoelectric coupling." Science Advances, vol. 11, no. 1, Jan. 2025. https://doi.org/10.1126/sciadv.adp9379
De, Chandan, Liu, Yu, Ayyagari, Sai Gayathri, et al., "Discovery of a layered multiferroic compound Cu<sub>1-x</sub>Mn<sub>1+y</sub>SiTe<sub>3</sub> with strong magnetoelectric coupling," Science Advances 11, no. 1 (2025), https://doi.org/10.1126/sciadv.adp9379
@article{osti_2502158,
author = {De, Chandan and Liu, Yu and Ayyagari, Sai Gayathri and Zheng, Boyang and Kelley, Kyle P. and Hazra, Sankalpa and He, Jingyang and Pawledzio, Sylwia and Mali, Subin and Guchhait, Samaresh and others},
title = {Discovery of a layered multiferroic compound Cu<sub>1-x</sub>Mn<sub>1+y</sub>SiTe<sub>3</sub> with strong magnetoelectric coupling},
annote = {Multiferroic materials host both ferroelectricity and magnetism, offering potential for magnetic memory and spin transistor applications. Here, we report a multiferroic chalcogenide semiconductor Cu1-xMn1+ySiTe3 (0.04 ≤ x ≤ 0.26; 0.03 ≤ y ≤ 0.15), which crystallizes in a polar monoclinic structure (Pm space group). It exhibits a canted antiferromagnetic state below 35 kelvin, with magnetic hysteresis and remanent magnetization under 15 kelvin. We demonstrate multiferroicity and strong magnetoelectric coupling through magnetodielectric and magnetocurrent measurements. At 10 kelvin, the magnetically induced electric polarization reaches ~0.8 microcoulombs per square centimeter, comparable to the highest value in oxide multiferroics. We also observe possible room-temperature ferroelectricity. Given that multiferroicity is very rare among transition metal chalcogenides, our finding sets up a unique materials platform for designing multiferroic chalcogenides.},
doi = {10.1126/sciadv.adp9379},
url = {https://www.osti.gov/biblio/2502158},
journal = {Science Advances},
issn = {ISSN 2375-2548},
number = {1},
volume = {11},
place = {United States},
publisher = {AAAS},
year = {2025},
month = {01}}
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 764https://doi.org/10.1016/j.nima.2014.07.029